New designs and manufacturing methods are described which reduce the degradation of JFET noise performance due to neutrons. Two basic premises governed the choice of design and …

This 200 MHz JFET cascode circuit features low crossmo- dulation, large-signal handling ability, no neutralization, and AGC controlled by biasing the upper cascode JFET.

1.结型场效应管的概述（JFET）：结型场效应管基本结构（JFET）： 这里提示一下N沟道和P沟道的图像画法（不要搞混了） 2.结型场效应管的工作原理（以N沟道为例）（JFET）： 注意这 …

The operation of JFET is controlled by electric field effect. Thus, JFET is a voltage-controlled current source device, whereas BJT is a current-controlled source device. There are two types …

结型场效应管（英語： junction gate field-effect transistor ，縮寫： JFET ），是单极场效应管中最简单的一种。 它可以分 n 沟道（ n-channel ）或者 p 沟道（ p-channel ）两种。

The 50V InterFET J503, J504, and J505 JFET’s are targeted for current regulation and limiting applications. The SOT23 package is pinned out as a standard JFET and is required by the …

Junction field effect transistors (JFETs) have a gate that is isolated by a depletion layer. They are available as discrete devices and in integrated circuit technology. Fig. 90 shows how a P …

JFET是一个电压控制的晶体管，它有两个不同的工作区域，取决于施加到源极和漏极的电压是否大于或小于晶体管的夹断 ( pinch-off)电压。 在漏极/源极电压低于此值的情况下工作，被称为 " …

JFET AMPLIFIER 2 1 3 TOP VIEW D G S J SERIES TO-92 TOP VIEW SST SERIES SOT-23 TOP VIEW . Linear Integrated Systems • 4042 Clipper Court • Fremont, CA 94538 • Tel: 510 …

来自 onsemi 的 J105 – JFET N 通道 25 V 625 mW 通孔 TO-92-3。 DigiKey 提供数以百万计电子元器件的定价和供应信息。