Abstract: We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 dB measured at a frequency of 37 GHz, NF <; 2 dB with >24dB of gain across 28 GHz- 39.2 ...

MACOM is continually enhancing and expanding its MMIC power amplifier product portfolio to meet customers’ demanding technical challenges by leveraging state-of-the-art foundry technologies and proprietary in-house processes.

2019年1月24日 · 分类号密级udc注1学位论文ka波段功率放大器mmic的研究（题名和副题名）方慧俊（作者姓名）指导教师谢俊副教授电子科技大学成都（姓名、职称、单位名称）申请学位级别硕士学科专业电磁场与微波技术提交论文日期018.03.30论文答辩日期018.05.09学位授予单位和日期电子科技大学018年6月答辩委员会 ...

amplifiers for satellite communication and electronic warfare applications at Ka Band. The high efficiency combining methodology coupled with the advancements in GaN MMIC technology enable solid state amplifiers to achieve output power levels at Ka Band previously only obtainable by traveling wave tube amplifiers. Figure 1 shows the

RF performance characteristics of Ka-band gallium nitride a (GaN) monolithic microwave integrated circuit (MMIC) based HPA for cognitive radio platforms. These characteristics include the output power, gain, power added effi ciency (PAE), RMS error vector magnitude (EVM), spectral efficiency, 3rd-order

Abstract: In order to better adapt to the requirements of smaller noise and better performance in low-noise amplifiers in radio communications,this article simulates and designs a 35GHz broadband monolithic microwave integrated circuit (MMIC) low noise amplifier,by adopting InGaAs pseudo-crystal high electron mobility transistor (pHEMT) process ...

This letter presents a MMIC implementation of the Load-Modulating Loop Combiner (LMLC) power amplifier (PA) architecture for Ka-band operation. This architecture incorporates elements of a feed-forward amplifier topology and the Doherty power amplifier to provide load modulation operation and improved linearity performance.

Abstract—This paper reports the design and performance of state-of-the-art GaN MMICs and a fully packaged Ka-band SSPA. Incorporating harmonic tuning, the MMICs produce power levels up to 10 W CW with efficiencies in the high thirties (42% peak) at frequencies of 30 to 34 GHz.

Abstract — The design and performance of two high efficiency Ka-band power amplifier MMICs utilizing a 0.15μm GaN HEMT process technology is presented. Measured in-fixture continuous wave (CW) results for the 3-stage balanced amplifier demonstrates up to 11W of output power and 30% power added efficiency (PAE) at 30GHz.

The realized MMIC shows an output power of 10W, cov-ering the full 17.3GHz – 20.2GHz band with a flat behaviour (less than 1dB of ripple) and a remarkable PAE, higher than 35% with a peak of 45% in the center, together with a power gain above 24dB.