We report the dependency of the keep-out zone (KOZ) on crystal direction ([110], [100]) and show that KOZ can be reduced by using a more elastic low-k SiOC material as the liner instead of the conventional SiO 2.

2023年1月1日 · An accurate thermal stress distribution around a single TSV is firstly obtained by finite element analysis. Then we simulate the transistors using strained silicon technology and apply the TSV–induced stress to the structure to study their magnitudes and mutual influences.

In this paper, we analyse the TSVBOX timing requirements and deduce a design methodology for TSVBOX-based 3D Network-on-Chip (NoC) to overcome the TSVBOX speed degradation. Performance comparisons...

2014年6月27日 · Abstract: Keep-out-zone (KOZ) is a conservative way to prevent any devices/cells from being impacted by the through-silicon via (TSV)-induced stress. In this paper, an effective approach was proposed of reducing the KOZ induced by coaxial TSV, by using the structure of coaxial-annular TSV, without decreasing the electrical performance of ...

In this paper, we study the impact of KOZ dimension on stress, carrier mobility variation, area, wirelength, and performance of 3D ICs. We demonstrate that, instead of requiring large KOZ, 3D-IC placers must exploit TSV stress-induced carrier mobility variation to improve the timing and area objectives during placement.

Through Silicon Via (TSV) has been utilized in vertically stacking IC dice to implement real system-in-chip applications. However, threshold voltage and mobility of MOSFETs can be influenced by induced mechanical strain of the TSV, causing degradation or non-stability of functional circuits.

2019年7月1日 · In this paper, a KOZ determination method for TSVs has been developed by solving Poisson's equation, which provides the characteristics of the nonlinear TSV MOS capacitance.

通过使用ansys'hfss进行模拟，论文对比了不同tsv结构的电气特性，证明了同轴环形tsv的可行性。 该研究不仅提供了一种优化tsv设计以减小koz的新策略，还对tsv制造工艺提出了建议，这对提高芯片集成度和系统性能具有重要意义。

2018年10月1日 · For the first time in this Letter, we experimentally determine the transistor KOZ for fabricated coaxial TSVs using microRaman spectroscopy technique for both analogue and digital circuital applications.

2013年6月10日 · KOZs based on the >10% change in carrier mobility are identified by finite element numerical calculations associated with the corresponding piezoresistance coefficients. The numerical results of the changes in saturated current are …