Using Kelvin probe force microscopy (KPFM) we studied the local charge trapping states at the SiO 2 –oligothiophene interface in a field effect transistor (FET), where SiO 2 is the gate dielectric. KPFM reveals surface potential inhomogeneities within the oligothiophene monolayer, which correlate with its structure.

钙钛矿太阳能电池测试中经常会用到KPFM，该测试涉及到好几个概念，属于物理学，不懂得小伙伴可能很难理解和区分，以及他们之间的关系如何判断？

Then, we present the pulsed force Kelvin probe force microscopy (PF-KPFM) as an innovative improvement to KPFM, which provides an enhanced spatial resolution of <10 nm under ambient conditions. PF-KPFM is promising for the characterization of heterogeneous materials with spatial variations of electrical properties.

SiO2 and Al2O3 surfaces exposed to periodically modulated extreme ultraviolet (EUV) light (lambda = 46.9 nm) have been investigated at the mu m scale by optical microscopy, scanning electron...

The materials were synthesised as large-area thin-films on SiO2 using direct chalcogenisation of pre-deposited metal films. Alongside XPS, the Raman spectra with several excitation wavelengths...

2023年3月13日 · KPFM is based on the detection of the electrostatic force component due to a potential difference between the surface and the AFM cantilever's tip, and its subsequent minimization by a proper electric potential. Mapping this compensation bias yields access to the electrostatic landscape of a sample's surface.

2022年9月16日 · A simple implementation of Kelvin probe force microscopy is reported that enables recording topographic images in the absence of any component of the electrostatic force. Our approach is based on a...

据报道，开尔文探针力显微镜 (KPFM) 的简单实现可以在没有任何静电力分量（包括静态项）的情况下记录地形图像。 我们的方法基于在数据立方体模式下运行的闭环 z 光谱。

A simple implementation of Kelvin probe force microscopy (KPFM) is reported that enables recording topographic images in the absence of any component of the electrostatic force (including the static term). Our approach is based on a close loop z …

首次在不同湿度条件下使用开尔文探针力显微镜 (KPFM) 对单层和多层二硫化钼 (MoS2) 的表面电势 (SP) 变化进行原位可视化和检测。 N 型掺杂源自 SiO2 衬底，在剥离的 MoS2 中发现，并伴有五层的屏蔽长度。