Suitable for Military Radios, Cellular Base Staions, Broadcast FM/AM, MRI, Laser Drivers and others. "Polyfet" process features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Part #: L2801. Download. File Size: 42Kbytes. Page: 2 Pages. Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR.

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The L2801 from Polyfet RF Devices is a RF Transistor with Frequency 1 to 1000 MHz, Power 41 dBm, Power (W) 15 W, Power Gain (Gp) 12 dB, VSWR 10.0:1. Tags: Surface Mount. More details for L2801 can be seen below.

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General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

The document describes the Polyfet RF Devices L2801, a silicon VDMOS and LDMOS transistor designed for broadband RF applications, suitable for military radios, cellular amplifiers, and more.

Description: SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR. 2 Results. Part #: L2801_14. Datasheet: 61Kb/2P. Manufacturer: Polyfet RF Devices.