2021年5月30日 · Low On-Resistance SOI-LDMOS With Mobility-Enhancing Auxiliary Cell Abstract: The bi-directional potential modulation concept is proposed for high-voltage SOI-LDMOS in this paper. The surface electric potential in main cell can be modulated in both the forward conduction (FC) state and the revised bias (RB) state.

2024年9月12日 · 横向扩散金属氧化物半导体晶体管 （Lateral Diffused Metal Oxide Semiconductor, LDMOS）具有击穿电压高、开关速度快、易于集成等优点。 功率MOS器件 根据电流的流向不同可以分为LDMOS和 垂直扩散金属-氧化物半导体场 (Vertically-Diffused Metal-Oxide Semiconductor ，VDMOS)。 其中，VDMOS 更多地被用在分立器件中，如逆变器、电子开关等. 而LDMOS 凭借其极易集成的特点，以及为了实现器件功率控制和耐高压的特性，而更 …

Abstract: Optimum LDMOS array layout design is proposed which is tolerant against not only the negative carrier injection but also the ESD events. Both are indispensable features of the LDMOS, however, they have trade-off relation from cell array design point of view.

Abstract: A silicon-on-insulator (SOI) lateral diffused metal-oxide semiconductor (LDMOS) with potential modulation plates (PMPs) and deep-oxide trenches (DOTs) is proposed and studied through TCAD simulations, which aims to enhance the electron mobility and improve the ON-resistance ( RON ).

2025年3月1日 · A trench SOI LDMOS with high-k film trench and L-shaped gate in 3-D design has been presented. The HK film is capable of adjusting the electric flux and the EF around the trench, which improves both of BV and R on,sp for LG-HKT SOI. The LG can expand the current path width, which significantly decreases R on,sp. Moreover, the collapsed EF near ...

2023年10月17日 · LDMOS( Laterally Diffused Metal Oxide Semiconductor；横向扩散金属氧化物半导体)是为900MHz蜂窝电话技术开发的，蜂窝通信市场的不断增长保证了LDMOS晶体管的应用，也使得LDMOS的技术不断成熟，成本不断降低，因此今后在多数情况下它将取代双极型晶体管 …

2015年6月1日 · The structural modifications in the conventional power laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOS) are carried out to improve the breakdown voltage, on-resistance, gate-charge and figure-of-merits of the device with reduced cell pitch.

2020年9月23日 · TOKYO--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) and its manufacturing subsidiary, Japan Semiconductor Corporation, have developed Laterally Double Diffused MOS (LDMOS) cell array design that is highly tolerant of negative carrier injection and electrostatic discharge (ESD) events.

180nm bulk-Si mobile power management process – LDMOS – 55nm bulk-Si silicon IoT platform – EDMOS – DC and RF benchmark to 5V CMOS • Power and RF application characterization – ISM bands, WiFi, performance against cellular industry standards – Embedded power and RF with the same device unit cell • Summary – PowerSoc and RF use ...

2019年6月1日 · LDMOS with ultra-low specific on-resistance was achieved and implemented in 90-nm BCD technology. It was found that STI-based LDMOS exhibits slightly better BV-R sp tradeoff, compared with SO-based LDMOS due to shorter cell pitch.