LVGL — Light and Versatile Embedded Graphics Library
LVGL is the most popular free and open-source embedded graphics library to create beautiful UIs for any MCU, MPU and display type. From consumer electronics to industrial automation, any application can leverage LVGL's 30+ built-in widgets, 100+ style properties, web-inspired layouts, and typography system supporting many languages.
It will examine what it is, the typical UIS ratings reflected on datasheets and how designers can properly use them. The main purpose of this application note then, is to supply designers with useful tools and information needed to appropriately deal with UIS related issues in their circuits. FIGURE 1. FIGURE 2. FIGURE 3. FIGURE 4. FIGURE 5.
Influences of the wafer-level testing method on unclamped …
Abstract: For power MOSFETs used in industrial and automotive applications, the Unclamped Inductive Switching Safe-Operating Area (UIS-SOA) is critical for motion control, especially when used as a pulse-width modulation control device. The current after turn-off of the inductive load will flow through the device's source/body diode in an ...
(PDF) Influences of the wafer-level testing method on unclamped ...
2017年10月1日 · The UIS test is used to characterize the performance of power devices under unclamped inductive loading conditions. Extreme operating condition can be expected when all the energy stored in the...
Configurations and method for carrying out wafer level …
A new method to detect UIS failure and limit the short circuit current is needed to prevent damage to the probe during wafer level UIS testing. a timing and make before break circuit 180 is...
Unclamped Inductive Switching (UIS) testing is an important robustness test that is defined for applications on the application data sheet, and also...
TW200722771A - Configurations and method for carrying out wafer level …
The circuit includes a current sense circuit for measuring an unclamped inductive testing (UIS) current that increases with an increase of a pulse width inputted from the gate driver to the MOFET...
功率MOSFET的UIS特性研究 - 豆丁网
1．UIS的电路级机理及测试方法。 2．UIS的器件物理级原理及失效模式。 3．UIS对功率MOSFET的电特性影响。 4．功率MOSFET的UIS热特性分析。 本文选用一款应用于汽车电子领域的深槽栅MOSFET，根据PQA（Product
Today’s avalanche-rated MOSPOWER FET exhibits a ruggedness that far exceeds the performance of any power MOSFET of earlier years. This application note reviews the history of unclamped inductive switching (UIS) and examines various theories pertaining to failure.
Degradation of the low voltage power MOSFET electrical parameters ...
Degradation of low voltage power MOSFET electrical parameters induced by high field and subsequent avalanche mechanisms during multipulse UIS test is presented. Unclamped inductive switching (UIS) condition represents the harsh circuit …