2017年8月30日 · Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe 2, and confirms the low...

2021年11月19日 · Using MBE, we can achieve controlled growth of the 1T and 1H polymorphs of monolayer NbSe 2 (Fig. 1, A and B) on both graphite and graphene substrates by changing …

2022年10月，两篇关于NbSe2超导特性的工作先后发表于 Nature Physics 和 Nature Materials，基于 Quantum Design综合物性测量系统PPMS获得的电磁输运数据，对材料超导性的研究和判定，起到了关键性作用。 NbSe2材料减薄到单层极限时，可以获得二维Ising超导性，虽然面内上临界场显著提升，但超导转变温度却有所下降，仅有0.9-3.7K，也就是说单层NbSe2 Ising超导性的获得是以牺牲其他重要性质为代价的。 鉴于此， 清华大学周树云教授团队和于浦教授团队 另辟蹊 …

2023年7月1日 · The 2D NbSe 2 flakes were grown in an ultrahigh vacuum molecular beam epitaxy (MBE) system with a base pressure of 1 × 10 −8 Pa. After cleaving in the atmosphere with a scotch tape, the HOPG substrates were transferred into the load-lock chamber promptly and degassed at ∼870 °C for several hours before use.

5 天之前 · Here we demonstrate that the superconducting gap of NbSe2 monolayers on graphene can be modified at specific momenta by changing the twist angle between the layers.

2021年3月24日 · Although 1T phase NbSe2 does not occur naturally in bulk form, it has been discovered that the 1T and 1H phases can coexist when monolayer NbSe2 is grown via molecular beam epitaxy (MBE). This discovery has inspired theoretical investigations predicting collective phenomena such as ferromagnetism in two dimensions.

2018年5月3日 · In this paper, we report the MBE growth of highly oriented monolayer NbSe 2, and its characterization by scanning tunneling microscopy (STM), angle-resolved photoemission spectroscopy (ARPES),...

Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and con rms the low defect.

2024年11月2日 · We use an enhanced MBE protocol (one-pot two-step molecular beam lateral epitaxy) to synthesize VSe 2, NbSe 2, and their lateral heterostructures in ultrahigh vacuum (UHV) (base pressure of ∼8 × 10 –9 mbar).

2021年11月30日 · In particular, we study the electronic ground state of high-quality SL-NbSe 2 grown by molecular beam epitaxy (MBE) on four substrates with markedly distinct structural and electronic nature: bilayer graphene (BLG)/SiC (0001), SL-boron nitride (h-BN)/Ir (111), Au (111), and bulk WSe 2.