2025年1月22日 · Multilayer TI/normal insulator vdW heterostructures have been constructed by sequential direct growth using molecular-beam epitaxy (MBE) 10,16, a scalable approach that produces structurally ...

实验首次在原子薄悬浮vdW膜（如石墨烯和六方氮化硼）两面上，通过分子束外延（MBE）技术实现了双面vdW外延生长，成功制备了外延对齐的拓扑绝缘体（TIs）Sb₂Te₃和Bi₂Se₃异质结构。

2022年2月23日 · While many of the demonstrations of vdW FMs materials relied on bulk crystals and on exfoliated flakes in the 2D limit, growth by molecular beam epitaxy (MBE) has been pursued to expand the...

2025年2月22日 · In this work, we develop a polymer-assisted dry transfer method and successfully perform full-film transfer of various MBE-grown 2D vdW materials including transition metal dichalcogenides (TMD), topological insulators (TI) and 2D magnets.

该团队通过 分子束外延 （MBE）技术，成功制备了双面vdW外延异质结构。 具体而言，他们在原子薄石墨烯或六方氮化硼的两侧，分别外延生长了高质量的 拓扑绝缘体 （如Sb₂Te₃和Bi₂Se₃）。

2022年5月27日 · Here, we report the synthesis by molecular beam epitaxy (MBE) of full vdW heterostructures that interface ultrathin ferromagnetic 1T-CrTe 2 films with ZrTe 2, a candidate topological Dirac...

2020年1月1日 · During the past years, molecular beam epitaxy (MBE) has proven to be outstanding in the synthesis of 2D materials. In this chapter, we will summarize several kinds of 2D systems, including graphene-like materials and TMD materials, which have been successfully realized by MBE.

2023年3月15日 · We study the vdW epitaxial growth of two 2D materials, CrTe 2 and Bi 2 Te 3, using the MBE technique. We unravel the detailed morphological and electronic structures of the CrTe 2 /Bi 2 Te 3 heterostructure with the emergence of moiré patterns, which are strongly dependent on the step height of the CrTe 2 layer.

2021年3月1日 · Two-dimensional van der Waals (vdW) materials and more specific, 2D chalcogenides are a promising class of new materials awaiting their usage in the semiconductor industry applications. However, the integration of 2D chalcogenides relying on industry-compatible manufacturing processes is still a major challenge.

2017年12月1日 · van der Waals epitaxy (VDWE) is an ideal method for growing 2D materials and topological insulators (TIs) onto a variety of substrates for heterostructure and integrated circuit technologies.