Aug 29, 2017 · Here, we report layer-by-layer epitaxial growth of scalable transition-metal dichalocogenide (TMDC) thin films on insulating substrates by MBE and demonstrate ambipolar transistor operation. The proposed growth protocol is broadly applicable to other TMDCs, providing a key milestone toward fabrication of van der Waals heterostructures with ...

Sep 12, 2024 · Epitaxial Growth of Monolayer WS 2 Single Crystals on Au (111) Toward Direct Surface-Enhanced Raman Spectroscopy Detection. The epitaxial growth of wafer-scale two-dimensional (2D) semiconducting transition metal dichalcogenides (STMDCs) single crystals is the key premise for their applications in next-generation electronics.

Jun 25, 2015 · In this work, we present a scanning tunneling microscopy and spectroscopy (STM/S) study of MBE-grown WSe 2 ML and BL, showing atomically flat epifilm with no domain boundary (DB) defect. This contrasts epitaxial MoSe 2 films grown by the same method, where a dense network of the DB defects is present.

MBE growth of wafer-scale highly crystalline TMD monolayers at low-temperature is achieved. Island-substrate interaction is found to play a critical role in vdW epitaxy of single-crystalline TMDs on on-axis substates. The TMD monolayers are of high uniformity and low intrinsic defect density.

Mar 28, 2025 · In the present paper, ultrathin films of WS 2 were grown on Al 2 O 3 using laser molecular beam epitaxy (LMBE). By applying our advanced 3D reciprocal space mapping technique, the presence of long-range order in the growing …

Feb 25, 2019 · Here we successfully obtained the monolayer 1T′-WSe 2 film on bilayer graphene (BLG) substrate using molecular beam epitaxial (MBE) method. Combining the in-situ scanning tunneling microscopic...

We transfer any CVD grown monolayers onto your substrates of choice! Our R&D has developed scalable methods to transfer large area h-BN, graphene, MoS2, MoSe2, WS2, WSe2, ReS2, ReSe2, SnS2, SnSe2, PtS2, and PtSe2 sheets onto almost any...

Mar 29, 2024 · We show that a 2 (or ) trilayer of can be grown by molecular-beam epitaxy (MBE) onto gallium phosphide (GaP) substrate. A sharp, high-quality -GaP interface was confirmed by scanning high-resolution transmission electron microscopy and x …

World's first molecular beam epitaxy (MBE) grown WS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below).

World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below).