The MGF1302 is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

MGF1302 1296 MHz - PCB. All PCBs made of 1.6 mm double side FR4 or G10 epoxy (Er=4.8). Back side left as ground plane. All used SMD components are type 1206. AutoCAD files in DXF format for Printed Circuit Boards: MGF1302 1296 MHz - DXF

The MFG1302 is a low-noise GaAs FET with an N-Channel Schottky gate, which is designed for use in the S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

Download the MGF1302 datasheet for detailed specifications and information on the MGF1302 electronic component.

1997年1月11日 · Mitsubishi Electric's MGF1302 is a trans rf fet n-ch 0.1a 3-pin gd-4. in the fet transistors, rf fets category. Check part details, parametric & specs and download pdf datasheet from datasheets.com, a global distributor of electronics components.

Description: LOW NOISE GaAs FET. 2 Results. Part #: MGF1302_97. Datasheet: 361Kb/6P. Manufacturer: Mitsubishi Electric Semiconductor.

The MGF1302 is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

ローノイズ GaAsFET MGF1302は高周波増幅用に最適なFETです。 在庫限りの販売で、おひとり様2個まで購入可能です。 デバイスの足が長いため、キャビティプリアンプに使用することがおすすめです。 入手困難な貴重なデバイスで、在庫は少ないです。

The MGF1302 is a low-noise GaAs FET with an N-channel Schottky gate, which is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metal-ceramic package assures minimum parasitic losses, and has a configuration suitable for microstrip circuits.

Each module consists of one IGBT in a single configuration with a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. : Low Drive Power.