2N3055(NPN), MJ2955(PNP) Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features DC Current Gain − hFE = 20−70 @ IC = 4 Adc Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc Excellent Safe Operating Area Pb−Free Packages are Available*
MJ2955 Datasheet(PDF) - STMicroelectronics
Description: COMPLEMENTARY SILICON POWER TRANSISTORS. Manufacturer: STMicroelectronics.
MJ2955G_onsemi (安森美)_MJ2955G中文资料_PDF手册_价格-立创 …
该 PNP 双极功率晶体管适用于大功率放大器和开关放大器应用。 2N3055 (NPN) 和 MJ2955 (PNP) 为互补器件。 MJ2955G由onsemi (安森美)设计生产，立创商城现货销售。 MJ2955G价格参考￥11.32。 onsemi (安森美) MJ2955G参数名称：晶体管类型：PNP；集电极电流 (Ic)：15A；集射极击穿电压 (Vceo)：60V；耗散功率 (Pd)：115W；直流电流增益 (hFE)：20@4A,4V；特征频率 (fT)：2.5MHz；集电极截止电流 (Icbo)：700uA；集射极饱和电压 (VCE (sat))：1.1V；工作温 …
General Purpose and Low VCE(sat) Transistors | MJ2955 - onsemi
The PNP Bipolar Power Transistor is designed for use in high power amplifier and switching amplifier applications. The 2N3055 (NPN) and MJ2955 (PNP)are complementary devices. Product services, tools and other useful resources related to MJ2955. If you wish to buy products or product samples, please log in to your onsemi account. I C Cont. (A)
2N3055(NPN), MJ2955(PNP) Preferred Device Complementary Silicon Power Transistors Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Features • DC Current Gain − hFE = 20−70 @ IC = 4 Adc • Collector−Emitter Saturation Voltage − VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc
MJ2955参数_双极性晶体管芯片中文资料_ST Microelectronics - 百 …
stmicroelectronics mj2955 单晶体管 双极, pnp, -60 v, 2.5 mhz, 115 w, -15 a, 70 hfe
MJ2955 - Low voltage PNP power transistor - STMicroelectronics
The devices are manufactured in planar technology with “base island” layout and are suitable for audio, power linear and switching applications. Speed up your design by downloading all the EDA symbols, footprints and 3D models for your application. You have access to a large number of CAD formats to fit with your design toolchain.
MJ2955 STMicroelectronics | Mouser
1 天前 · MJ2955 STMicroelectronics Bipolar Transistors - BJT PNP Power Switching datasheet, inventory, & pricing.
MJ2955 STMicroelectronics | Discrete Semiconductor Products
Order today, ships today. MJ2955 – Bipolar (BJT) Transistor PNP 60 V 15 A 115 W Chassis Mount TO-3 from STMicroelectronics. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
MJ2955 Datasheet, PDF - Alldatasheet
The MJ2955 is a high-power NPN bipolar junction transistor (BJT) commonly used for general-purpose high-power amplification and switching applications. Here are the key features and specifications of the MJ2955:
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