These devices are designed for use in general−purpose amplifier and switching applications. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1.

下载MJE2955中文资料、引脚图、Datasheet数据手册，有三极管(BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

Description: POWER TRANSISTORS (10A,60V,75W). Manufacturer: Mospec Semiconductor.

Complementary silicon power transistors are designed for general−purpose switching and amplifier applications. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Figure 1.

COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in Jedec TO-220 package. It is intended for power switching circuits and general-purpose amplifiers. The complementary PNP type is MJE2955T. INTERNAL SCHEMATIC DIAGRAM. September 2003 . ABSOLUTE MAXIMUM RATINGS.

©2001 Fairchild Semiconductor Corporation Rev. A1, February 2001 MJE2955T PNP Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Electrical Characteristics TC=25°C unless otherwise noted * Pulse test: PW≤300µs, duty cycle≤2% Pulse

Description: POWER TRANSISTORS (10A,60V,75W). 43 Results. Datasheet: 37Kb/4P. Manufacturer: Fairchild Semiconductor.

MJE2955TG – Bipolar (BJT) Transistor PNP 60 V 10 A 2MHz 75 W Through Hole TO-220 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

The Bipolar Power Transistor is designed for use in general-purpose amplifier and switching applications. The MJE2955T (PNP) and MJE3055T (NPN) are complementary devices. …

Description: 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS. Manufacturer: Motorola, Inc.