DATA SHEET www.onsemi.com Semiconductor Components Industries, LLC, 1994 December, 2024 − Rev. 15 1 Publication Order Number: MMBT5401LT1/D High Voltage Transistor PNP Silicon MMBT5401L, SMMBT5401L,

MMBT5401 – Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 350 mW Surface Mount SOT-23-3 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

MMBT5401 — PNP Epitaxial Silicon Transistor Publication Order Number: MMBT5401/D © 2004 Semiconductor Components Industries, LLC. September-2017, Rev. 2 MMBT5401 PNP Epitaxial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high ...

2025年3月11日 · MMBT5401 onsemi / Fairchild Bipolar Transistors - BJT PNP Transistor General Purpose datasheet, inventory, & pricing.

MMBT5401 — PNP Epitaxial Silicon Transistor © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com MMBT5401 Rev. 1.1.0 November 2014 MMBT5401 PNP Epitaxial Silicon Transistor Features • PNP General-Purpose Amplifier • This device is designed as a general-purpose amplifier and switch for applications requiring high voltage.

MMBT5401-7-F – Bipolar (BJT) Transistor PNP 150 V 600 mA 300MHz 300 mW Surface Mount SOT-23-3 from Diodes Incorporated. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

FR−5 @ 100 mm2, 0.5 oz. copper traces, still air. *Date Code orientation and/or overbar may vary depending upon manufacturing location. Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.

MMBT5401 is a type of bipolar junction transistor (BJT) that is commonly used in electronic circuits. It is an NPN transistor, which means it consists of an n-type base sandwiched between two p-type regions, the emitter and the collector.

MMBT5401 Document number: DS30057 Rev. 12 - 2 © 202 7 of 7 www.diodes.com March 2024 4 Copyright Diodes Incorporated. All Rights Reserved. MMBT5401 IMPORTANT NOTICE 1. DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH

The MMBT5401, MMBT5401-L, and MMBT5401-H are available in the SOT-23 package. TA = 25°C, unless otherwise specified. Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.