In MMIC/MIC packaging, bond wires are used to connect input and output connectors to reduce the iterative and time consuming process of making a new mechanical housing. Usage of multiple bond wires also provides redundancy in case of breakage of a single wire.

先来设计第一级的 输入匹配网络，在10GHz处从50Ω匹配至20.2+j*3.5Ω，用简单的 LC电路 实现。 串联电感为446.18 pH (0.446 nH)，386.62 fF (0.386 pF)。 然后把电容器电阻器全部换成 Design kit 器件，仿真结果看起来还可以，暂时不用调谐。 但是能这样直接用吗？ 不能，因为上述生成的版图如图所示，电感引线在Metal1层，电容在Metal2层，因此上述电路需要做一个修正。 加入 过孔，可以看到，有影响，但影响并不大。 再微调一下电路，使其谐振点接近10 GHz。 接下 …

Bond first to the die, then to the package. Use multiple short bondwires for RF input and output pads. Take care to observe the recommended assembly diagrams provided for each Microsemi MMIC, and be sure to bond to the appropriate pads. Microsemi typically recommends 0.7-mil soft gold bondwire, used with a rear-feed wedge bond tool

The HMC-ALH445 is a GaAs MMIC HEMT self-biased, wideband Low Noise Amplifier die which operates between 18 and 40 GHz. The amplifier provides 9 dB of gain, 3.9 dB noise figure at 28 GHz and +12 dBm of output power at 1 dB gain compression while requiring only 45 mA from a single +5V supply.

MMIC's are becoming more common in commercial applications. Their small size and potentially lower cost has made them valuable in the growing market of millime-terwave systems. Their size and delicate nature also makes them fragile. The following information is provided to help die users handle, mount, and bond MMIC chips.

2007年12月10日 · By applying a simple electromagnetic (EM) simulation technique, it is possible to account for the encapsulant's effect on the MMIC's field-effect-transistor (FET) active devices. The article that follows will also explore modeling the MMIC's passive structures as well as the package's interconnection transitions.

2019年5月20日 · Thermocompression wire bonds are used to connect the chips to other die or microwave circuits. Flip chip technology uses unthinned (25-mil thick) MMIC chips with bumps on its surface, which, when inverted, are soldered or epoxied directly to a microwave circuit substrate to provide simultaneous die attach and circuit interconnection.

Dual YIG oscillator (HP) wide band coverage from 2 to 20GHz. This is a more modern design, already incorporating MMIC amplifiers on both oscillator sections.

MMIC designs carried out by Plextek RFI that demonstrate how highly accurate MMIC performance predictions can be achived. Close agreement between measured and modelled performance is exhibited across a wide range of circuit functions, operational frequencies and process nodes and all designs were first pass successes. Insight is also given

MILLER MMIC LLC. www.millermmic.com Sales: [email protected] Technical : [email protected] MM241PD GaAs MMIC 0.5 - 18 GHz ... Assembly Drawing (Bond testing) GaAs MMIC Power Amplifier 32-35GHz 38 r-MMIC 32-35 GHz Notes: 1. Die thickness: 100um 2. Typical bond pad is 100*100 μm2 3. Bond pad metalization: Gold