N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motorcontrol circuits and general purpose switching applications. The IRFP460 is supplied in the SOT429 (TO247) conventional leaded package. S-81360-Rev.

SMPS MOSFET IRFP460A HEXFET® Power MOSFET l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits Applications l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current

下载IRFP460PBF中文资料、引脚图、Datasheet数据手册，有场效应管(MOSFET)详细引脚图及功能的应用电路图电压和使用方法及教程。

Power MOSFET. Markings: Part Marking Information. Devices: TO-247AC, TO-247AD, TO-274AA (High Voltage) Package Drawings: Package Information. TO-247AC (High Voltage) Reliability Data: Package Reliability. Environmental and Package Testing Data for TO-247AC (HVM) Reliability Data:

2021年9月29日 · The IRFP460 is an N-channel MOSFET manufactured by Vishay. It is designed to have a high breakdown voltage of 500V and a low on-resistance of 0.27Ω at 10V gate voltage. Given the high breakdown voltage, this MOSFET can be used in switching converters with mains voltage input, high voltage amplifiers, and motor drivers. How To Use IRFP460 MOSFET

SMPS MOSFET IRFP460N HEXFET® Power MOSFET Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply High speed power switching Benefits Applications Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current

The HEXFET®technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on state resistance combined with high transconductance; superior reverse energy and diode recovery dv/dt capability.

2022年4月1日 · IRFP460, an N-channel power MOSFET, is designed to offer the best combination between low on-resistance, fast switching, and low on-resistance. This high-voltage device has a drain-source breakdown of 500V and a 0.27Ω on-resistance at 10V gate voltage.

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process. This technology matches and improves the performances compared with standard parts from various sources.

Power MOSFET FEATURES • Low gate charge Qg results in simple drive requirement • Improved gate, avalanche and dynamic dV/dt ruggedness † Fully characterized capacitance and avalanche voltage and current • Effective Coss specified • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note