These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace …

These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged …

MRF300AN和MRF300BN这些设备适用于HF和VHF通信，工业、科学和医疗 (ISM)以及广播和航天应用。 这些设备非常耐用，最高性能达250MHz。 镜像引脚排列版本 (A和B)，以简化推挽 …

RF Power LDMOS Transistor, 300 W CW over 1.8-250 MHz, 50 V. Data Sheet: PDF; All information for MRF300AN

2 天之前 · NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These …

MRF300AN – RF Mosfet 50 V 27MHz ~ 250MHz 28dB 300W TO-247 from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

A high power low loss wide band transmission line type TLT transformer are used in amplifier. T emperature regulated bias circuit. Parts color may different from photos depend on availability.

These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace …

2018年6月19日 · NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These …

6 天之前 · NXP MRF300 Reference Circuits support the MRF300AN RF power LDMOS transistors by sharing the same PCB layout. These reference circuits enable RF designers to …