We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity R c ~2×10 −5 Ω×cm 2 and Ni ohmic contacts …

By applying a newly developed two-step mesa structure consisting of the first inner mesa with partially thinned p-GaN layer and the second outer mesa etched to n-GaN drift layer, the high …

2015年7月21日 · Trifluoromethane-containing plasma is used to passivate the mesa surfaces and suppresses the surface leakage current of GaN p-i-n rectifiers. Reduction of surface leakage …

2024年6月7日 · In this work, vertical GaN p-i-n (PIN) devices fabricated with a shallow-bevel-angle mesa of ~1-2° are developed, achieving low leakage current densities and robust …

We report on nickel based technology for the fabrication of GaN mesa structures. Ti/Ni ohmic contacts for n-doped GaN with contact resistivity Rc ~2×10-5ÊΩ×cm2 and Ni ohmic contacts …

2013年7月9日 · We develop and characterize multi-mesa-channel (MMC) AlGaN/GaN high-electron mobility transistors (HEMTs), in which a periodic trench structure is fabricated only …

2018年11月15日 · This work reports on the study of device isolation of AlGaN/GaN HEMTs using multi-energy, multi-dose ion implantation, and single and dual step mesa etching technique. Ar …

2022年10月17日 · In this letter, a novel approach is presented to overcome issues in AlGaN/GaN high electron mobility transistors (HEMTs), such as metal discontinuity of the gate stemmed …

In this report, the impact of different mesa designs on the optical and electrical characteristics for GaN-based micro-light emitting diodes (µLEDs) has been systematically and numerically …

2024年4月21日 · Even lower bevel mesa angles are reported for a novel process optimization that resulted in improving GaN to photoresist selectivity by a factor of 5–10. As a result, even …