ZYGO corporation got contracted to build several EUV-L Micro-Field Exposure Tools with 0.5NA, known as MET5. –Those tools are used for infrastructure development required for the EUV lithography industry to support printing at the ~12nm node …

The MET is a 0.3-NA extreme ultraviolet (EUV) microlithography tool situated on undulator beamline 12.0.1.3 of the Advanced Light Source at Lawrence Berkeley National Laboratory. The MET has a unique programmable coherence illuminator that allows it to achieve world-leading 12-nm imaging resolution.

Micro-Exposure Tool MET5: the first NA=0.5 EUV lithography system •R&D Tool for ~ 8 nm feature sizes •Field size: 200 µm x 30 µm •Modified Schwarzschild Design •Wavelength : 13.5 nm •Reduction ratio: 5x •NA: 0.50 •Near diffraction limit: Total system transmitted wavefront error < 1.0 nm • Mirrors = substrate + Mo/Si

2018年10月12日 · The Berkeley MET5, funded by EUREKA, is the world’s highest-resolution EUV projection lithography tool. With a 0.5-numerical aperture (NA) Schwartzchild objective, the Berkeley MET5 is capable of delivering 8-nm resolution for dense line/space patterns.

Improvements in Berkeley MET5 targeting ≤ 8 nm imaging 18 • New 6-channel height sensor for wafer Z/tip/tilt • Shot-noise limited performance • Noise floor < 1 nm • Dual wafer plane stage with integrated wavefront interferometer • Supports in-situ measurement of EUV wavefront quality • Integrated distance measurement

To meet industry demand for extreme ultraviolet (EUV) materials testing capabilities down to the 2 nm lithography node, the EUV Photoresist Testing Center at Berkeley Lab has been expanded to include 0.5-NA EUV microfield exposure tool with a resolution of 8 nm and robotic sample processing tailed for research. This paper provides an

To upgrade the 0.3 NA MET s, a 0.5 NA system (MET5) was designed and proposed with an 11 nm target resolution goal [1]. The primary purpose of these small field (20 µm × 300 µm) tools is to provide very early learning into the extendibility of

Development of a high numerical aperture EUV lithography tool: the Berkeley MET5 Platform P. Naulleau, A. Allezy, C. Anderson, C. Cork, P. Denham, M. Dickinson, G. Gains, J. Gamsby, E. Gullikson, R. Miyakawa, S. Rekawa, W. Thur, D. Zehm, Center for X-ray Optics, Berkeley Lab •NA = 0.5 •Magnification = 5x •Resolution limit = 8 nm

The Berkeley MET5, funded by EUREKA, is an EUV projection lithography tool located at the ALS. With a depth of focus of 30 nm, the 0.5 NA tool requires 1 nm resolution metrology in the three linear directions and 100 nrad in tip/tilt.

ØRefractive index is not accurately known in EUV / x-ray ØWe have optimized methodologies to measure Cr, Pt and W with improved accuracy near M-N-and O-edges. ØMore materials need measurements –accurate refractive index values will enable the design of EUV components with maximized performance B 4C Al 2O 3 Al Mg Mo SiC Zr Wavelength (nm)