This paper reviews recent progress in the development of GaAs Metamorphic HEMT (MHEMT) technology for microwave, millimeter-wave, and submillimeter-wave applications. Short gate-length (50-100 nm) Metamorphic High Electron Mobility Transistors have been optimized for high gain and low noise performance.

2019年10月1日 · MHEMTs are eminent among the transistors used for developing Terahertz imaging and sensing, radiometry, high resolution Radars, Collision avoidance Radars and Terahertz time domain spectroscopy. Heart of such high …

The noise performance of the 35 nm mHEMT was investigated on the basis of a packaged H-band amplifier which achieved a small-signal gain of more than 20 dB between 220 and 300 GHz. The averaged measured noise figure was 6.1 dB which is to our knowledge the lowest published value of any MMIC technology in this frequency range.

1999年5月1日 · Single and double pulse doped metamorphic high electron mobility transistor (MHEMT) structures have been grown on GaAs substrates by molecular beam epitaxy. A linear indium graded buffer layer was used to expand the lattice constant.

Metamorphic high electron mobility transistor (mHEMT) technologies with 50 and 35 nm gate length were developed for the fabrication of submillimeter-wave monolithic integrated circuits (S-MMICs) operating at 300 GHz and beyond.

讨论了采用埋栅结构实现GaAs基改性高电子迁移率晶体管(MHEMT)增强型模式工作的有关问题,提出了增强型MHEMT的设计与实现方法.通过不同金属(Al,Pt,Ti)/InAlAs Schottky势垒系统的实验比较研究,确定在增强型MHEMT工艺中采用具有最高势垒高度的Pt Schottky埋栅结构;并进行了 ...

al–oxide–semiconductor HEMT (MOS-HEMT). It used atomic layer deposition (ALD) aluminum oxide (Al2O3) film both as a gat. nal electron gas (2DEG) are known as HEMTs. In HEMTS electric current flows between a drain and source element via the 2DEG, which is located at the interface between two layers of differin.

At IAF, we have developed a mHEMT technology suitable for monolithic SMW integrated circuits (S-MMICs). As shown in Fig. 1, the e-beam defined T-shaped gate, which is defined by a four layer PMMA resist, has a length down to 35 nm. Fig. 1. Scanning electron microscopy of a 35 nm mHEMT cross-section.

在毫米波頻段的射頻和微波通信系統中，高電子遷移率電晶體 (HEMTs) 和應變式異質接面高遷移率電晶體 (PHEMTs) 因其高功耗附加效率、出色的雜訊表現、高開關速度和獨特的電流-電壓特性而被廣泛使用。 這些特性使 HEMTs 和 PHEMTs 能夠在廣泛的應用中提高設計性能。 HEMTs 和 PHEMTs 都是場效電晶體 (FET) 的一種變體，適用於單片微波積體電路 (MMIC) 的製造。 HEMT 和 PHEMT 結構將移動載流子與摻雜離子物理隔離，並防止光學聲子和離子化雜質造成潛在的 …

2021年6月17日 · 本文报告了 InGaAs 变质高电子迁移率晶体管 (mHEMT) 低温噪声机制的研究和优化。 栅极长度为 100、50 和 35 nm 的 HEMT 技术在室温和低温条件下进行了表征。