The MJE/MJF18206 have an application specific state–of–the–art die dedicated to the electronic ballast (“light ballast”) and power supply applications. • Improved Global Efficiency Due to Low Base Drive Requirements: — High and Flat DC Current Gain hFE — Fast Switching

After years of innovation and hard work, we independently developed a series of products including rectifier bridge, photovoltaic anti-reflection diode, welding machine module, thyristor, spiral thyristor, flat thyristor, solid state relay and other high-quality products.

MJE Transistor Series Datasheets and Pinouts.

下载MJE13003 (RANGE:20-25)中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

下载MJE340中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

来自 onsemi 的 MJE172G – 晶体管 - 双极 (BJT) - 单 PNP 80 V 3 A 50MHz 1.5 W 通孔 TO-126。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

The MJE/MJF18006 have an applications specific state–of–the–art die designed for use in 220 V line–operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following:

mje系列晶体管 mje series transistors 特点：耐高压开关速度快安全工作区宽符合rohs 规范 features： high voltage capability high speed switching wide soa rohs compliant

MJE系列三极管参数查旬, MJE三极管资料查询代换参数型号材料极性功耗集极-基极电压集极-射极电压射极-基极电压最大集电极电流特征频率放大系数 外型封装用途及互换型号VCBVCEVEBICmaxfThFE MJE101 Si pnp 75W 40V 40V 4V 5A 25/150 -TO220

Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.