MMBT3906L, SMMBT3906L Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO −40 Vdc

This 200 mA, 40 V PNP Bipolar Junction Transistor is designed for use in linear and switching applications. The device is housed in the SOT-23 package, which is designed for lower power …

下载MMBT3906中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

Complementary NPN type available (MMBT3904L). Collector Current Capability ICM =-200mA. Low Voltage(Max:-40V). Ideal for medium power amplification and switching. “G” is for Halogen Free package. Note Transistor mounted on an FR4 printed-circuit board. MIN. MAX. Note Pulse test: tp≤300 ms; d≤0.02.

该 PNP 双极晶体管适用于线性和开关应用。 此器件采用 SOT-23 封装，适用于低功率表面贴装应用。 MMBT3906LT1G由onsemi (安森美)设计生产，立创商城现货销售。 MMBT3906LT1G价格参考￥0.0641。 onsemi (安森美) MMBT3906LT1G参数名称：晶体管类型：PNP；集电极电流 (Ic)：200mA；集射极击穿电压 (Vceo)：40V；耗散功率 (Pd)：225mW；直流电流增益 (hFE)：[email protected],1.0V；特征频率 (fT)：250MHz；集电极截止电流 (Icbo)：50nA；集射极 …

Part #: MMBT3906L. Download. File Size: 164Kbytes. Page: 6 Pages. Description: General Purpose Transistor (NPN Silicon). Manufacturer: ON Semiconductor.

来自 onsemi 的 MMBT3906LT1G – 晶体管 - 双极 (BJT) - 单 PNP 40 V 200 mA 250MHz 300 mW 表面贴装型 SOT-23-3（TO-236）。 DigiKey 提供数以百万计电子元器件的定价和供应信息。

MMBT3906L, SMMBT3906L General Purpose Transistor PNP Silicon Features • S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit

MMBT3906L – Bipolar (BJT) Transistor PNP 40 V 200 mA 250MHz 350 mW Surface Mount SOT-23 from Taiwan Semiconductor Corporation. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

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