
Continuous Large Area Monolayered Molybdenum Disulfide …
2023年3月15日 · Our findings show that for large-sized cryst. monolayer MoS2 flakes, MoO3 is a better choice than AHM and Te-assisted synthesis. Moreover, Te as growth promoter, can lower down growth temp. by ∼250 °C.
Chemical vapor deposition of clean and pure MoS
Molybdenum disulfide (MoS2) synthesized via chemical vapor deposition (CVD) is commonly accompanied by some intermediate products in the form of MoO3−x, resulting in MoS2–MoO3−x hybrids with diverse structures. In this study, we show that through the rational design of heating evaporation rate of the precurs Crystal Growth
Modulation, Characterization, and Engineering of Advanced …
Herein we proposed a model system of thin film MoO 3 /V 2 O 5 bilayer systems. The crystallinity, texture, and morphology of each layer in the bilayer structures were determined by X-ray diffraction (XRD), Raman spectroscopy, high resolution scanning electron microscopy (HR-SEM), and atomic force microscopy (AFM).
Stepwise Sulfurization from MoO3 to MoS2 via Chemical Vapor …
2018年9月12日 · Chemical vapor deposition (CVD) is used widely to synthesize monolayer and few-layer transition metal dichalcogenide molybdenum disulfide (MoS 2), a two-dimensional (2D) material with various applications in nanoelectronics, catalysis, and optoelectronics.
Atomistic reaction mechanism of CVD grown MoS2 through MoO3 …
2022年9月27日 · Chemical vapor deposition (CVD) through sulfidation of MoO 3 is one of the most important synthesis techniques to obtain large-scale and high-quality two-dimensional...
Simple electrodeposition of MoO3 film on carbon cloth for high ...
2020年6月15日 · The CV kinetic analysis reveals the surface capacitance-dominated charge storage mechanism for the MoO 3 electrode under different potential windows. Moreover, the energy density of the as-assembled 2.0 V MoO 3 //MoO 3 aqueous symmetric supercapacitor device can reach up to 78 Wh kg −1 at 1 kW kg −1 .
Creating oxygen-vacancies in MoO3-x nanobelts toward high …
2019年4月1日 · Oxygen vacancies-rich MoO 3-x is prepared through a novel defect-engineering strategy. Oxygen-vacancies greatly increase the interlayer spacing, electrical conductivity and electrochemical activity of MoO3. High specific capacity up …
同时具有高质量与体积容量的柔性自支撑MoO3/MXene复合膜 - 知乎
MoO3因其低成本,无毒性,高电化学活性以及稳定性作为赝电容材料已经得到了广泛的关注,尤其考虑到其较高的理论容量(1005C g-1)。 这些优势使其非常有潜力成为实现同时具有高体积容量和质量容量的电极材料。
Cobalt-doped MoO3 thin films and dual-band ... - ScienceDirect
2023年12月1日 · In this work, we demonstrate the use of ultrasonic spray deposited bare MoO 3 and cobalt-doped MoO 3 (MoO 3:Co) thin films for EC applications. Cobalt (Co) doping is shown to significantly improve the cyclic stability when compared to the bare MoO 3 films.
CV of (a) MoO3 and (b) MoO2 and the charge discharge profile of …
Voltametry (CV) of MoO 3 is shown in fig. 3a demonstrates 4 prominent peaks in the first discharge curve. Peaks at 2.6 V and 2.3 V are due to the intercalation of Li ions into the interlayer...
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