2023年6月15日 · Literature encompasses numerous analytical IV model for 2D TMD material based FET. Incorporation of non-ideal factors like interface traps, inefficient doping, temperature dependence, mobility degradation, significant contact resistance, etc., plays a key role in modelling the device close to real time scenario.

2015年2月13日 · Engineering of MoS2-based FETs will be discussed in details for understanding contact physics, formation of gate dielectric, and doping strategies. Also reported are demonstrations of device behaviors such as low-frequency noise and photoresponse in MoS2-based FETs, which is crucial for developing electronic and optoelectronic devices.

2024年5月10日 · In this paper, we present lateral heterostructure transistors made of scalable chemical vapor-deposited molybdenum disulfide and chemical vapor-deposited graphene achieving a low contact...

2019年11月19日 · In this paper, we study the device characteristics of FETs fabricated using monolayer MoS 2 channels, directly grown on SiO 2 /Si substrate using salt-assisted CVD technique. 20 nm thick Ni 80 Fe...

为了利用石墨烯仅有1个碳原子厚度的优势，该工作将沟道材料MoS2沉积于台阶的侧壁上，使石墨烯栅极从横向方向上施加电场来控制沟道的开关。 图2. 垂直2D晶体管的制备工艺及结构示意图

Molybdenum disulfide (MoS 2) films possess intrinsic n-type conductivity, and thus development of p-type MoS 2 films for realizing practical next-generation complementary metal oxide...

Atomically thin molybdenum disulfide (MoS 2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS 2 minimize direct source–drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors.

- 在过去十年中，基于二硫化钼 (mos 2 ) 的场效应晶体管 (fet) 与集成电路 (ic) 技术的进步相结合，发现了从纳米生物分子检测到高性能计算等多种应用。

文章浏览阅读1k次，点赞31次，收藏19次。2025年，维也纳工业大学的Seyed Mehdi Sattari-Esfahlan和Tibor Grasser等人基于实验研究，深入探究了单晶SrTiO3（STO）基MoS2场效应晶体管（FETs）的性能、稳定性和可靠性。研究团队通过脉冲激光沉积（PLD）方法制备了STO薄膜，并将其与MoS2薄片集成，构建了背栅FET器件。

摘要 对带隙可调的二维层状半导体二硫化钼(MoS 2)的材料特性以及基于MoS 2 薄膜的器件性能和应用进行了简单阐述,重点分析了多种MoS 2 场效应晶体管(FET)的...