2023年4月17日 · Here, using interlayer excitons as a probe, we show that the interlayer interactions in heterobilayers of tungsten diselenide and molybdenum disulfide (WSe 2 /MoS 2) can be electrically...

2024年10月9日 · In this work, we observe multiple IX peaks in the photoluminescence (PL) spectrum of MoS 2 /WSe 2 heterobilayers with small twist angles (~0.5°). Additionally, the lowest-energy IX state shows...

2015年7月16日 · We determine a type-II alignment between MoS 2 and WSe 2 with a valence band offset value of 0.83 eV and a conduction band offset of 0.76 eV.

2016年1月19日 · This paper studies band-to-band tunneling in the transverse and lateral directions of van der Waals MoS2/WSe2 heterojunctions. We observe room-temperature negative differential resistance (NDR) in ...

2023年9月17日 · By tuning the Schottky barrier height and controlling the thickness of p-type WSe 2 in MoS 2 /WSe 2 /MoS 2 n-p-n selector for a punch-through transport, the selector shows high nonlinearity (≈ 230) and high current density (2 × 10 3 A cm −2) simultaneously.

2017年1月6日 · By using direct growth, we create a rotationally aligned MoS 2 /WSe 2 hetero-bilayer as a designer van der Waals heterostructure. With rotational alignment, the lattice mismatch leads to a periodic variation of atomic registry between individual van der Waals layers, exhibiting a Moiré pattern with a well-defined periodicity.

2020年6月26日 · In this study, a highly sensitive photodetector based on the van der Waals heterostructure of WSe 2 and MoS 2 was developed. The MoS 2 was utilized as the channel for a phototransistor, whereas the WSe 2 –MoS 2 PN junction in the out-of-plane orientation was utilized as a charge transfer layer.

2022年1月12日 · Density functional theory calculations as well as photoluminescence and time-resolved photoluminescence measurements are performed to characterize the photodetector figures of merit of multilayered p-WSe 2 /n-MoS 2 heterostructures with PANS.

2017年3月14日 · Here, we investigate transport properties of a prototype multilayer MoS 2 /WSe 2 heterojunction via a tunable charge inversion/depletion layer. A charge inversion layer was constructed at the surface of WSe 2 due to its relatively low doping concentration compared to that of MoS 2, which can be tuned by the back-gate bias.

2021年9月14日 · 二维过渡金属二硫属化物为创建具有令人兴奋的物理特性的范德华异质结提供了一个迷人的平台。由于它们典型的 ii 型能带排列，光激发的电子和空穴可以通过界面电荷转移。此外，这些异质结构中各个层的相对晶体排列代表了重要的自由度。基于这两种效应，人们提出了在光电子学和谷电子学中 ...