2015年5月4日 · Here, we report a synthesis of single-crystalline MoTe 2 that shows a reversible structural phase transition between 2H- and 1T′-MoTe 2 and the electronic phase transition between...

2H MoTe2 (alpha phase MoTe2) is a semiconductor and a diamagnetic system with an indirect band gap of ~1.2 eV. Monolay 2H-MoTe2 have a direct band gap which is inversely proportional to the number of layers. It is a direct band gap material only for single layer or bilayer.

2022年5月24日 · The MoTe2 film grown and annealed under the Te-rich condition is mainly composed of a pure 2H phase, while, under the Te-deficient conditions, the 2H-MoTe2 phase begins to evolve into...

2016年12月19日 · Chemical vapor deposition allows the preparation of few-layer films of MoTe 2 in three distinct structural phases depending on the growth quench temperature: 2H, 1T′, and 1T. We present experimental and computed Raman spectra for each of the phases and utilize transport measurements to explore the properties of the 1T MoTe 2 phase.

2017年10月11日 · Here, we demonstrate such an electrostatically induced structural phase transition between the 2H and 1T′ phases in monolayer MoTe 2. We show that this transition occurs uniformly over the...

2018年4月1日 · The 2H structure in MoTe 2 shows the ABA atomic stacking sequence whereas the 1T and 1T ′ demonstrate the ABC atomic stacking sequence. For the 2H and 1T, the atomic lattice can be well defined by the hexagonal lattice constant (α) and the Mo–Te bond length. In this study, the lattice constants for the 2H and 1T phases were predicted to be ...

2024年10月11日 · Raman spectroscopy confirms the growth of the 2H and 1T′ phases of MoTe 2. Then, we extensively study the optical properties of the 2H and 1T′ phases having variable nanodimensional thicknesses of MoTe 2 films using spectroscopic ellipsometry (SE). SE is a powerful technique for characterizing thin films, providing valuable information ...

因此，不同相和层结构的可用性意味着 MoTe2 有可能引领一个从石墨烯剥离开始的二维材料时代。 创新点. 1. MoTe2 的多相结构（例如1T'和2H相）提供了独特的电学和光学性能调谐可能性。 2. 开发出多样化的制备方法（如剥离和分子束外延）推动了高质量MoTe2样品的 ...

We demonstrate the distinct ultrafast recombination behaviors of spin-orbital splitting bands in bulk 2H-MoTe2 by time- and angle- resolved photoemission measurements. The femtosecond laser excited the splitting valence bands, which are distinguished in time domain exhibit an identical band upshift of ~19 meV and a band broadening of ~26 meV.

2、2H-MoTe2光电性能表征 为了进一步比较两种生长条件下得到的晶体质量，分别使用高温和低温条件下生长的MoTe2晶体制备得到场效应晶体管器件，对其电学以及光电性能进行表征。 实验结果证明，高温下得到的2H-MoTe2晶体的场效应迁移率仅为3.4cm2·V-1·s-1，而低温 ...