2020年7月24日 · In this work, we report the growth of large-area and homogeneous films of few-layered 1T′- or 2H-MoTe 2 by CVD on SiO 2 /Si and sapphire substrates using FeTe 2 precursor. At the deposition...

2016年12月19日 · Chemical vapor deposition allows the preparation of few-layer films of MoTe 2 in three distinct structural phases depending on the growth quench temperature: 2H, 1T′, and 1T. We present experimental and computed Raman spectra for each of the phases and utilize transport measurements to explore the properties of the 1T MoTe 2 phase.

2022年9月17日 · Chemical vapor deposition (CVD) has been extensively used to grow layer-controlled transition metal dichalcogenides (TMDCs) single crystals and films. Different approaches such as...

2019年8月1日 · We report a controllable method to synthesize two different morphologies of two dimensional (2D) 1T′-MoTe 2 film: rectangular MoTe 2 and irregular MoTe 2, respectively. The synthesis was carried out via chemical vapor deposition (CVD) …

2023年1月2日 · Although bottom-up growth of MoTe 2 could be achieved by the standard chemical vapor deposition (CVD) methods, the unsatisfactory lateral scale of resultant few or multilayer nanosheets is...

2022年10月25日 · In this respect, chemical vapor deposition (CVD) via tellurization of a pre-deposited Mo thin film is an easy and flexible way for synthesizing large scale MoTe 2 nanosheets. Here, the study report on the CVD of large-area (up to 4 cm × 1 cm) MoTe 2 nanosheets with pure 1T’ and 2H phase selection by design.

2021年3月30日 · We employed chemical vapor deposition (CVD) from powder precursors aiming at large-area growth of molybdenum ditelluride (MoTe 2) thin films, with controlled allotropic 2H and 1T′ phases. This major outcome entails tuning the parametric conditions of the precursor fluxes during the deposition.

2021年7月1日 · 2D molybdenum ditelluride (MoTe 2) with polymorphism is a promising candidate to developing phase-change memory, high-performance transistors and spintronic devices. The phase-transition-assisted chemical vapor deposition (CVD) process has been used to prepare large-scale 2H-MoTe 2 with large grain size and low density of grain boundary.

2017年1月9日 · In this work, we have developed a novel facile strategy to achieve large area, phase-controlled growth of few-layer, two-dimensional MoTe 2 and lateral 1T′–2H MoTe 2 heterostructures on one SiO 2 /Si substrate directly by special substrate position arrangement during chemical vapor deposition and tuning the cooling rate after growth.

2020年6月25日 · In this work, we report a versatile and scalable CVD growth of vertically aligned MoTe 2 with length of up to ∼ 7.5 µm on Mo foil. Remarkably, the dominant phase of the vertically aligned MoTe 2 can be tuned from 2H to 1T’ by increasing the …