2023年8月17日 · Here we demonstrate a giant intrinsic SHE coexisting with ferromagnetism in AB-stacked MoTe 2 /WSe 2 moiré bilayers by direct magneto-optical imaging. Under moderate electrical currents with...

2024年5月18日 · Motivated by recent experimental observations of opposite Chern numbers in R-type twisted MoTe 2 and WSe 2 homobilayers, we perform large-scale density-functional-theory calculations with...

2021年12月22日 · In this study, we report an electric-field-induced topological phase transition from a Mott insulator to a QAH insulator in near-60-degree-twisted (or AB-stacked) MoTe 2 /WSe 2 heterobilayers....

2018年6月13日 · We present a joint theoretical/experimental study of a van der Waals heterobilayer with type-I band alignment formed by monolayers of WSe 2 and MoTe 2. Our first-principles computation suggests that both the valence band maximum and the conduction band minimum of the WSe 2 /MoTe 2 heterobilayer reside in the MoTe 2 layer.

2024年11月17日 · Our results propose a viable way to customize the electronic and optical properties of the MoTe 2 /WSe 2 HBL using strain. We start our analysis by examining the electronic structure of the individual monolayers WSe 2 and MoTe 2 with optimized lattice parameters of 3.29 and 3.52 Å, respectively.

2023年3月17日 · We theoretically study the interplay between magnetism and a heavy Fermi liquid in the AB-stacked transition metal dichalcogenide bilayer system, MoTe 2 /WSe 2, in the …

AB 堆叠的 MoTe2/WSe2 结构是第一个在实验中被实现的名为（Kane-Mele model）凯恩-梅勒模型。 该模型最早在 2005 年由宾夕法尼亚大学 克里斯多福 ·H·布朗杰出物理学教授查尔斯·凯恩（Charles L. Kane）和同事尤金·米尔（Eugene J. Mele）教授在研究了石墨烯中自旋轨道相互 ...

2024年4月3日 · Here, a dual-mode phototransistor based on a MoTe 2 /WS 2 /WSe 2 double vdW heterostructure is designed. The bottom WSe 2 layer effectively modulates the entire MoTe 2 /WS 2 heterojunction channel, enabling both photoconductive and photovoltaic modes with exceptional optoelectronic properties in a single device.

Ultrafast charge transfer and valley dynamics in WSe2/MoSe2 heterostructure Stefano Dal Conte, Zilong Wang, Patrick Altmann, Wei Li, Lavinia Ghirardini, Michele Celebrano, Sandro De Silvestri, Deji Akinwande, and Giulio Cerullo

在这项工作中，使用混合方法研究了异质结构二碲化钼（MoTe 2 /MoSe 2 和 MoTe 2 /WSe 2）双栅极（DG）金属氧化物半导体场效应晶体管（MOSFET）的性能。 使用2H型双层MoTe 2以及MoTe 2 /MoSe 2 和MoTe 2 /WSe 2 的异质双层获得了器件特性 作为 DG MOSFET 中的沟道材料。 该方法使用 QuantumWise Atomistix ToolKit (ATK) 和 Sentaurus TCAD（技术计算机辅助设计）工具来模拟器件特性。 首先，利用密度泛函理论模拟了双层2H-MoTe 2 、异质双层MoTe 2 …