MPSA12由onsemi (安森美)设计生产，立创商城现货销售。 MPSA12价格参考￥0.105。 onsemi (安森美) MPSA12参数名称：类型：NPN；集射极击穿电压 (Vceo)：20V；直流电流增益 (hFE)：20000；耗散功率 (Pd)：625mW；集电极截止电流 (Icbo)：100nA；集射极饱和电压 (VCE (sat))：1V；工作温度：-55℃~+150℃@ (Tj)。 下载MPSA12中文资料、引脚图、Datasheet数据手册，有达林顿管详细引脚图及功能的应用电路图电压和使用方法及教程。

MPSA12 http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector−Emitter ...

This device is designed for applications requiring extremely high current gain at currents to 1.0A. Sourced from process 05. See MPSA14 for characteristics. Emitter 2. Base 3. Collector. * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. These are steady state limits.

Fairchild became a leading supplier of power semiconductors, analog and mixed-signal integrated circuits, and other semiconductor products. The company was acquired by ON Semiconductor in 2016 and its products and technologies continue to be developed and sold under the ON Semiconductor brand.

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MPSA12 MPSA13 MPSA14 SILICON NPN DARLINGTON TRANSISTORS TYPICAL ELECTRICAL CHARACTERISTICS R1 (18-March 2014) www.centralsemi.com

MPSA12 – Bipolar (BJT) Transistor NPN - Darlington 20 V 625 mW Through Hole TO-92 (TO-226) from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

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This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted. *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

MPSA12 onsemi Darlington Transistors NPN Darlington datasheet, inventory, & pricing.