We present the first Embedded Spin-Transfer-Torque MRAM (eMRAM) technology in a 14 nm CMOS node. A novel integration supports the highest eMRAM density (0.0273 um2 cell size), …

Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] . Developed in the mid-1980s, proponents …

Abstract: This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, …

2021年3月22日 · 磁阻式RAM（MRAM）是針對廣泛的商業可用性之中的幾種新型的非揮發性記憶體 (NVM)技術之一，但是要將MRAM設計到晶片和系統中，並不像其他類型的記憶體那麼簡 …

2017年7月10日 · IBM方面表示，其MRAM STT的访问时钟在10纳秒级别且功耗极低（仅为7.5微安），且速度表现远超过闪存甚至接近DRAM。 其适用范围从小型物联网系统芯片到大规模服 …

Spin-Transfer-Torque MRAM (STT-MRAM) is an emerging memory technology that possesses a unique combination of non-volatility, high endurance, and ease of integration using standard …

Daniel Worledge is a Distinguished Research Staff Member and the Senior Manager of MRAM at the IBM Almaden Research Center. He leads teams in Yorktown Heights and Albany in New …

This paper introduces the operation and features of Spin-Transfer-Torque Magnetoresistive Random Access Memory (STT-MRAM), and provides a brief history of the field. Then the four …

2024年10月20日 · IBM is an MRAM pioneer, collaborating with both Infineon and Samsung. In 2016, IBM and Samsung researchers demonstrated 11 nano-meter STT-MRAM junctions. In …

2020年11月12日 · IBM sees MRAM as offering better long-term reliability that is worth the cost and complexity of building a drive with three kinds of memory. The FCM 1 used Micron 64 …