
MRF300AN|300 W CW, 1.8-250 MHz, 50 V | NXP Semiconductors
These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace …
These devices are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace applications. The devices are extremely rugged and exhibit high performance up to 250 MHz. Measured in 13.56 MHz reference circuit (page 5). Measured in 27 MHz reference circuit (page 10).
MRF300AN NXP USA Inc. | Discrete Semiconductor Products
MRF300AN – RF Mosfet 50 V 27MHz ~ 250MHz 28dB 300W TO-247 from NXP USA Inc.. Pricing and Availability on millions of electronic components from Digi-Key Electronics.
MRF300AN_300W CW, 1.8-250MHz, 50V | NXP 半导体
MRF300AN和MRF300BN这些设备适用于HF和VHF通信,工业、科学和医疗 (ISM)以及广播和航天应用。 这些设备非常耐用,最高性能达250MHz。 镜像引脚排列版本 (A和B),以简化推挽 …
MRF300AN Product Information|NXP
These devices, MRF300AN and MRF300BN, are designed for use in HF and VHF communications, industrial, scientific and medical (ISM) and broadcast and aerospace …
MRF300AN NXP Semiconductors | Mouser
3 天之前 · NXP Semiconductors MRF300 RF Power LDMOS Transistors feature unmatched input and output, allowing wide frequency range operation from 1.8MHz to 250MHz. NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance.
NXP Semiconductors MRF300 RF Power LDMOS Transistors
2018年6月19日 · NXP MRF300 LDMOS transistors offer two opposite pin-connection versions (A and B) to be used in a push-pull and two-up configuration for wideband performance. These transistors are housed in an industry-standard TO-247 …
MRF300AN Datasheet (PDF) - NXP Semiconductors
Part #: MRF300AN. Download. File Size: 685Kbytes. Page: 17 Pages. Description: RF Power LDMOS Transistors. Manufacturer: NXP Semiconductors.
MRF300AN-27MHZ NXP Semiconductors | Mouser
2025年3月15日 · NXP MRF300 Reference Circuits support the MRF300AN RF power LDMOS transistors by sharing the same PCB layout. These reference circuits enable RF designers to generate power amplifiers for frequencies of up to 250MHz. The MRF300AN LDMOS transistor operates at 360W CW power (26.1dB gain) when the reference circuit board frequency is 27MHz.
MRF300AN NXP RF Power Transistor|RFMW
These high ruggedness RF Power LDMOS Transistors from NXP are designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub--GHz aerospace and mobile radio applications. Their unmatched input and output design allows for wide frequency range use from 1.8 to 250 MHz.
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