2016年3月8日 · CoFeB/MgO-based magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy are considered promising candidates for high-density spin-transfer torque magnetic random access memory (STT-MRAM) because of their large interfacial magnetic anisotropy and good scalability.

2022年9月23日 · Here, we propose and demonstrate a strategy to combining materials developed to stabilize and manipulate small skyrmions with a perpendicularly magnetized MTJ stack having a TMR of about 20% at room temperature. This strategy, also applicable to other materials that host skyrmions, opens a promising route to realizing skyrmion detection using MTJs.

2024年4月5日 · Here, we investigate electric field control of the resistance state of MgO-based perpendicular MTJs with easy-cone anisotropic free layers through strain-mediated magnetoelectric coupling in multiferroic heterostructures. A remarkable, nonvolatile, and reversible modulation of resistance at room temperature is demonstrated.

2017年2月2日 · In this work, we have developed a method to fabricate high-performance MgO-barrier MTJs directly onto ultrathin flexible silicon membrane with a thickness of 14 μm and then transfer-and-bond to...

2017年3月9日 · CoFeB/MgO-based magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy are considered to be a promising candidate to accomplishing Gbit-scale spin transfer torque magnetoresistive random access memory (STT-MRAM), due to large interfacial magnetic anisotropy and good scalability.

2010年7月11日 · Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation...

Specifically, the bit cell combines a tunable stochastic magnetic tunnel junction (MTJ) encoding the trained standard deviation and a multi-bit domain-wall MTJ device independently encoding the...

We demonstrate the manipulation of perpendicular magnetic anisotropy (PMA) in magnetic tunnel junctions (MTJs) by varying the layer stacks and temperature. PMA is tuned to compensate the shape...

2004年1月1日 · Local M–H loops have been measured on the free layer of a magnetic tunnel junction multilayers using the magneto-optical Kerr effect system, with 2 μm spatial resolution. The relatively irregular variations of coercivity H C (∼17.5 Oe) and exchange coupling field H E (∼7.5 Oe) are revealed in as-deposited sample prepared by the DC ...

2008年3月14日 · Correlation between electrical and magnetic properties of magnetic tunnel junctions (MTJ) for magnetic random access memory (MRAM) was studied. The MTJ (Ta/NiFeCr/ PtMn/CoFe/Ru/CoFe/Al 2 O 3 /CoFe/NiFe/Ta) was analyzed by utilizing R–H loops and MFM images. We verified that a kink in an R–H loop comes from a vortex domain of free layer.