Single-nanometer CoFeB/MgO magnetic tunnel junctions with …
2024年1月4日 · Making magnetic tunnel junctions (MTJs) smaller while meeting performance requirements is critical for future electronics with spin-transfer torque magnetoresistive random …
All-electrical skyrmionic magnetic tunnel junction - Nature
2024年3月20日 · Using a suite of electrical and multimodal imaging techniques, we show that the MTJ nucleates skyrmions of fixed polarity, whose large readout signal—20–70% relative to …
High density hexagonal MTJ array with 72 nm pitch and 30 nm CD …
2022年3月24日 · The cross-sectional microstructure of MTJ pillars was investigated by using FEI Helios G4 Transmission Electron Microscope (TEM) combined with an Energy-Dispersive X …
TEMT: A Transient Electronic–Magnetic–Thermal-Coupled …
However, the complex interplay of multiple physical mechanisms featured in MTJ devices imposes substantial challenges to their numerical modeling. In this work, we propose a fully …
Magnetic tunnel junctions - ScienceDirect
2006年11月1日 · We present a brief overview of the development of magnetic tunnel junctions, introducing the underlying physics. We also discuss two important commercial applications: …
中科院微电子所与华为海思合作，在无外磁场写入的自旋轨道矩磁 …
2022年8月15日 · 垂直自旋轨道矩磁隧道结器件（sot-mtj）是新一代磁随机存储技术的核心单元，它具有非易失、高速、低功耗、读写寿命长等特点，极有希望成为下一代非易失磁存储技术。
Current-induced magnetization switching in atom-thick tungsten …
2018年2月14日 · Spherical aberration corrected TEM (Cs-corrected TEM) and atomic-resolution electron energy-loss spectroscopy (EELS) were applied to study the structural properties of …
Progress and Application Perspectives of Voltage‐Controlled …
The basic storage element of an MRAM is the so-called magnetic tunnel junction (MTJ). An MTJ comprises a sandwiched device structure where an ultrathin insulating layer (typically made of …
中科院微电子所与华为海思合作在无外磁场写入的自旋轨道矩磁隧 …
2022年7月29日 · 垂直自旋轨道矩磁隧道结器件（SOT-MTJ）是新一代磁随机存储技术的核心单元，它具有非易失、高速、低功耗、读写寿命长等特点，极有希望成为下一代非易失磁存储技术 …
Figure 1: TEM images of a single-crystal MTJ with the...
We demonstrated a magnetic tunnel junction (MTJ) consisting of Fe/MgO-Si-MgO/Fe. Si layer was deposited at room temperature and at 700 ℃; when deposited at 700 ℃, Si diffused into …