The 2N2222 is a type of bipolar junction transistor (BJT) that is commonly used as a small-signal NPN transistor. It was one of the first transistors that were widely used, and it is still used today in a wide range of applications. The 2N2222 is known for its reliability and ease of use.

NPN Silicon Features • These are Pb−Free Devices* MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Characteristic Symbol Value Unit Collector−Emitter Voltage VCEO 40 Vdc Collector−Base Voltage VCBO 75 Vdc Emitter−Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation @ TA = 25°C Derate ...

The 2N2222 is a common NPN bipolar junction transistor (BJT) used for general purpose low-power amplifying or switching applications. It is designed for low to medium current, low power, medium voltage, and can operate at moderately high speeds. It was originally made in the TO-18 metal can as shown in the picture.

本文讨论了2N2222A 晶体管的概述。 什么是 2N2222A 晶体管？ 2N2222A晶体管是一种常见的NPN BJT，主要用于功率较小的开关放大应用。 该晶体管主要设计用于低功率、中低电流、中压并以相当高的速度工作。 在 2N2222 NPN 晶体管中，单个 P 掺杂层嵌入在两个 N 掺杂层之间。 该晶体管包括三个端子，如基极、发射极和集电极。 2N2222A晶体管符号如下图所示。 2N2222A晶体管提供800mA的恒定DC集电极电流，因此需要在需要低到中等电流的地方使用。 它通过 …

下载2N2222A中文资料、引脚图、Datasheet数据手册，有三极管 (BJT)详细引脚图及功能的应用电路图电压和使用方法及教程。

2009年4月2日 · NPN switching transistors 2N2222; 2N2222A FEATURES •High current (max. 800 mA) •Low voltage (max. 40 V). APPLICATIONS •Linear amplification and switching. DESCRIPTION NPN switching transistor in a TO-18 metal package. PNP complement: 2N2907A. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case

Order today, ships today. 2N2222 – Bipolar (BJT) Transistor NPN 30 V 800 mA 500 mW Through Hole TO-18 from onsemi. Pricing and Availability on millions of electronic components from Digi-Key Electronics.

Part #: 2N2222. Download. File Size: 53Kbytes. Page: 8 Pages. Description: NPN switching transistors. Manufacturer: NXP Semiconductors.

Description: NPN SILICON PLANAR EPITAXIAL TRANSISTORS. Manufacturer: Micro Electronics.

2024年8月21日 · 2N2222 is an NPN – BJT (Bipolar Junction Transistor) which means that in between the two N-doped layers, there is a single P-doped layer embedded with it. 2N2222 is a current-controlled transistor. Thus, a low current at the base terminal can be used to drive a high current between two other terminals.