3 天之前 · On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader …

4 天之前 · On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader …

2020年9月29日 · NXP is leading 5G cellular infrastructure expansion with the new 150 mm (6”) fab and its 20 years of GaN development expertise focused on power density, gain and …

2024年8月5日 · Chandler is now home to two of NXP’s five front-end fabs, delivering some of our most important products and technologies. As well as the Chandler Fab, we also have the …

2020年10月2日 · NXP this week opened its own new 150mm (6-inch) GaN fab built in Arizona to focus primarily on the communications infrastructure market for 5G radio systems and with …

2024年6月5日 · VIS and NXP have agreed to contribute an additional $1.9 billion which will be utilized to support the long-term capacity infrastructure. The remaining funding including loans …

NXP’s 150 mm GaN Wafer Fab — Most Advanced RF GaN Fab in the US N XP, the world’s largest supplier of LDMOS power transistors for cellular infrastructure, has built and qualified a …

On September 29, 2020, NXP opened the RF Gallium Nitride (GaN) 150 mm (6-inch) wafer size fab in Chandler, Arizona. This fab combines NXP’s expertise as the industry leader in RF …

2020年9月30日 · NXP Semiconductors has officially opened its new 150 mm (6-inch) RF Gallium Nitride (GaN) fab in Chandler, Arizona. This highly advanced fab is dedicated to supporting 5G …

Visit NXP’s new GaN Fab in Chandler, Arizona. This manufacturing facility is the most advanced GaN Fab for RF in the U.S. Follow NXP's fab manager Geno Fallico as he takes you on a tour. …