High-speed III-V nanowire photodetector monolithically ... - Nature
2020年9月11日 · We demonstrate high-speed optical data reception with a nanostructure photodetector at 32 Gb s −1, enabled by a 3 dB bandwidth exceeding ~25 GHz. When operated as light emitting diode, the p-i-n...
Recent progress on infrared photodetectors based on InAs and …
2020年5月6日 · Indium arsenide (InAs) nanowire, a III–V compound semiconductor structure with a narrow band gap, shows high electron mobility and high absorption from the visible to the mid-wave infrared (MWIR), holding promise for room-temperature high …
Ultrahigh-performance and broadband photodetector from …
2024年12月1日 · To streamline integration hurdles, high-Sb composition large-diameter GaAsSb nanowire photodetectors were developed, minimizing recombination centers and boosting gain.
Review on III–V Semiconductor Nanowire Array Infrared …
2023年4月4日 · In recent years, III–V semiconductor nanowires have been widely investigated for infrared photodetector applications due to their direct and suitable bandgap, unique optical and electrical properties, flexibility in device design and to create heterostructures, and/or grow on a foreign substrate such as Si with more effective strain ...
ZnO nanowire UV photodetectors: At the intersection of flexibility ...
2024年12月6日 · Wang et al. designed a flexible, self-powered UV photodetector by transferring ZnO nanowires onto a polydimethylsiloxane (PDMS) substrate patterned with silver nanowires and PEDOT: PSS/Ag electrodes. When exposed to UV light, the photodetector generated a current of 300–500nA at zero bias due to the photovoltaic effect in the n- ZnO/ p- PEDOT ...
Individual β-Ga2O3 nanowires as solar-blind photodetectors
2006年4月11日 · Individual β-Ga 2 O 3 nanowires as solar-blind photodetectors are investigated. The detectors show encouraging advantages to 254 nm light. The dark current is on the order of pA. The conductance of the nanowire increases by about three orders of magnitude under 254 nm ultraviolet illumination.
High-detectivity InAs nanowire photodetectors with spectral response ...
2013年8月16日 · In this work we report the fabrication of InAs nanowire-based photodetectors, which showed a very high photoresponse over a broad spectral range from 300 to 1,100 nm.
Fast Response Solar-Blind Ultraviolet Photodetector Based on the …
Abstract: Regular β-Ga2O3 nanowires were successfully prepared on the p-Si substrate via chemical vapor deposition. More significantly, a simple method was invented to prepare a heterojunction photodetector of the β-Ga2O3 nanowire network/p-Si substrate. The photodetector exhibited excellent photodetection performance at room temperature ...
[PDF] Nanowire photodetectors. - Semantic Scholar
Silicon nanowires (SiNWs) have emerged as a promising material for high-sensitivity photodetection in the UV, visible and near-infrared spectral ranges. In this work, we demonstrate novel planar SiNW …
Nanowires for photodetection - ScienceDirect
2023年1月1日 · The physics and technology of nanowire (NW) photodetectors offer numerous insights and opportunities for nanoscale optoelectronics, photovoltaics, plasmonics, and emerging negative indexes metamaterials-based devices.