2023年10月30日 · Niobium pentoxide (Nb2O5), as an important dielectric and semiconductor material, has numerous crystal polymorphs, higher chemical stability than water and oxygen, and a higher melt point than most metal oxides.

2009年11月13日 · The definition of the roadmap for the future generations of dynamic random access memory (DRAM) devices underlines the need for extremely low EOT values (from 0.5 to 0.35 nm) while maintaining very low leakage currents. 1 To meet these specifications, alternative dielectric materials with dielectric constants on the order of 50 (and beyond) and ...

Excellent TS characteristics of NbO 2, such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (ϕ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO 2, we can form ultrathin Nb 2 O 5 /NbO 2 stack layer for hybrid memory devices with both TS and MS.

2023年3月1日 · Known for its fast rate and good cyclability, niobium pentoxide (Nb 2 O 5) is a promising anode material for lithium-ion batteries and is specifically modelled and investigated in this work. Commercially sourced Nb 2 O 5 was characterised using scanning electron microscopy, X-ray diffraction, and micro-computed tomography.

2012年7月17日 · Nb 2 O 5 is a wide bandgap (3.6 eV) dielectric material with a high index of refraction (n = 2.4) and permittivity (29 to 200 depending of the crystalline phase 5). The electrical properties and potential DRAM application of Ta 2 O 5 /Nb 2 O 5 bi-layer grown by ALD using Nb (OEt) 5 6, 7 or NbF 5 8 as the niobium precursor have been reported.

2023年11月1日 · 随着能源危机的不断加剧，nb2o5晶型的优异电性能使其成为锂离子电池（lib）和超级电容器（sc）潜在应用的研究热点。本文对 nb2o5 多晶型物的基本性质、晶体结构、合成方法和应用进行了综述。还简要讨论了与该材料相关的未来研究方向。

2005年6月17日 · The relatively low crystallization temperature made the Ta 2 O 5 /Nb 2 O 5 possible to integrate into the real DRAM device. The RIR capacitor with crystalline Ta 2 O 5 /Nb 2 O 5 bi-layers had EOT of 7.6 , and 100 nA/cm 2 at 1.1 V, which satisfied the requirements of DRAM capacitor for 60 nm generation and beyond.

当电极循环至0.5V时，无定形Nb2O5（a-Nb2O5）自发转变为岩盐结构（RS-Nb2O5），并能够通过透射电子显微镜（TEM）和同步辐射X射线衍射确定。 同时， 密度泛函理论 （DFT）计算表明，RS-Nb2O5表现出极高的储锂容量和低的锂离子迁移能垒。

2025年1月31日 · 例如，先进 DRAM 电容器需要高带隙过渡金属氧化物和新型掺杂剂 (如 TiO2、Nb2O5 等)，以提高电容且降低漏电流。 同时，金属氧化物及其混合物也是高效铁电存储器的关键材料。 非晶铟镓锌氧化物 (IGZO)因其具有理想的迁移率、大面积成膜均一、低热预算等优点，被视为实现高密度三维集成的最佳候选沟道材...

2 天之前 · 微导纳米 新变化一：ald/ tio2、nb2o5等→先进dram电容器（高带隙过渡金属氧化物和新型掺杂剂）；ald/金属氧化物及其混合物→ ...