2017年8月30日 · Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe 2, and confirms the low...

2024年2月12日 · Forming heterostructures of 2D metals and semiconductors using chemical vapor deposition (CVD) has significant potential to effectively reduce contact resistance in electronic devices. However, semiconducting transition metal dichalcogenide (TMD) layers in metal–semiconductor heterostructures are currently restricted to monolayers despite the ...

2019年3月12日 · 以传统化学气相沉积法（CVD）生长的多层硒化物超导体NbSe2为例（见图1），与大气隔离时，超导转变温度Tc为4.80K，与外界空气接触1小时以后，Tc下降为4.45K，与空气接触超过36小时，则超导特性消失。

2023年11月9日 · By exploiting a magnetic field-induced transition in CrSBr from a state with zero magnetization to a state with finite magnetization, we can achieve controllable and reversible suppression of the...

2023年1月20日 · In this work, a superconductively tunable NbSe 2 was grown by a two-step vapor deposition method (including physical vapor deposition (PVD) and chemical vapor deposition). The crystalline quality of Nb films was improved by optimizing the sputtering temperature and pressure.

Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and con rms the low defect.

2021年11月10日 · In this work, we demonstrate epitaxial chemical vapor deposition (CVD) growth of 2D NbS 2 crystals on a sapphire substrate, with a thickness-dependent structural phase transition. NbS 2 crystals are epitaxially aligned by the underlying c-plane sapphire resulting in high-quality growth.

2021年8月5日 · Here, NbSe 2 /Nb-doped-WSe 2 metal-doped-semiconductor (M/d-S) vdWHs are created via a one-step synthesis approach using a niobium molar ratio-controlled solution-phase precursor. The one-step growth approach synthesizes Nb-doped WSe 2 with a controllable doping concentration and metal/doped-semiconductor vdWHs.

2022年10月，两篇关于NbSe2超导特性的工作先后发表于Nature Physics和Nature Materials，基于Quantum Design综合物性测量系统PPMS获得的电磁输运数据，对材料超导性的研究和判定，起到了关键性作用。 Nature Physics：插层NbSe2块材中的可调控Ising超导性

Electrical properties of the CVD-grown NbSe2 field-effect transistor (FET) device. (a) Optical image of the NbSe2 device with drain and source electrodes; (b) transfer characteristic with...