2017年8月30日 · Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe 2, and confirms the low...

2023年9月15日 · Anti-Stokes photoluminescence (PL) is light emission at a higher photon energy than the excitation, with applications in optical cooling, bioimaging, lasing, and quantum...

2024年2月12日 · The doping signal and chemical composition of the heterostructure were systematically studied using Raman and photoluminescence (PL) spectroscopy, X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and transmission electron microscopy (TEM).

2025年3月1日 · Herein, 2D NbSe 2 nanosheets have been introduced at the SnO 2 /perovskite interface to release the undesired residual tensile strain in perovskite films and to form a more matched interfacial energy level alignment. As a result, we have obtained a high-quality perovskite film and further an improved photovoltaic performance.

2015年7月20日 · Nature Nanotechnology - Enhanced electron–phonon interactions in mono- and few-layer NbSe2 result in a significantly increased transition temperature of charge density waves compared with ...

examine the variation in integrated PL intensity (total sum of X0, X and defect emission), where, compared to the bright emission observed from the uncapped region, a reduction by a factor of ve is seen at the interfacial contact between NbSe 2 and MoSe 2 akes. However, the fact that any PL signals are recorded from the NbSe

2020年7月8日 · Through low-temperature photoluminescence (PL) microscopy, we discover a sharp emission feature, L1, that is localized at the NbSe 2-capped regions of MoSe 2. L1 is observed at energies below the commonly studied MoSe 2 excitons and trions and exhibits temperature- and power-dependent PL consistent with exciton localization in a confining ...

2024年11月28日 · 利用分子束外延技术在2H-NbSe2块体上生长单层VSe2，实现了人工近藤晶格/超导体异质结的构建。 光谱成像扫描隧道显微镜测量表明，在单层VSe2上出现了一个具有√3 × √3周期性的电荷密度波（CDW）相。

2003年1月24日 · Nanotubes of NbSe 2 in admixture with nanorods have been produced by the thermal decomposition of NbSe 3 and investigated by electron microscopy and other techniques. The nanostructures have outer diameters in the 35–100 nm range, with lengths in excess of several hundred nanometers.

使用化学气相传输（CVT）技术合成二硒化铌（NbSe）晶体。 密度泛函理论（DFT）计算采用广义梯度近似（GGA）方法。 利用 Perdew-Burke-Ernzerhof (PBE) 赝势函数来强调 NbSe 六方 P6/mmc 对称结构晶相的结构、电学、弹性常数和光学特性。 此外，态密度 (DOS) 显示，在费米能级，Nb (3d) 态占主导地位，Se (5p) 和 Se (5 s) 态发挥次要作用。 能带结构证实了晶体的金 属性质，显示出导带和价带之间的重叠。