2015年11月2日 · Here we present an electronic characterization study of a single two-dimensional (2D) layer of NbSe 2 by means of low-temperature scanning tunnelling microscopy/spectroscopy (STM/STS),...

2018年2月9日 · We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to...

2003年5月1日 · In this paper, we report the results of resistivity measurements and STM/STS on NbSe 2 with various RRR to examine this issue.

2004年5月1日 · In this work we present scanning tunneling microscopy and spectroscopy (STM/S) measurements on NbSe 2, in the temperature interval 0.3 K <T<7.2 K. We have used a home built STM, whose sample holder can move in a controlled way millimetric distances in the x - and y -directions.

2016年9月16日 · The work by Ugeda et al using low-temperature scanning tunnelling microscopy and spectroscopy (STM and STS), transport measurements and angle-resolved photoemission (ARPES) is by now the most comprehensive experimental study of the NbSe 2 single-layers.

2024年3月15日 · By using scanning tunneling microscopy and spectroscopy (STM/STS), we confirm the presence of spin fluctuations in monolayer 1T-NbSe 2 by observing the Kondo resonance as monolayer 1T-NbSe 2...

2008年4月1日 · The vortex electronic structure in the multiband superconductor NbSe 2 is studied by means of scanning tunneling spectroscopy (STS) using a superconducting tip. The use of a superconducting tip (Pb) as a probe provides an enhancement of the different features related to the DOS of NbSe 2 in the tunneling conductance curves.

2024年11月2日 · Here, we present direct synthesis of a superconductor-magnet hybrid heterostructure by combining superconducting niobium diselenide (NbSe2) with the monolayer vanadium diselenide (VSe2). Mol.-beam epitaxy growth in ultra-high vacuum yields clean and atomically sharp interfaces.

2015年6月28日 · Here we present an electronic characterization study of a single 2D layer of NbSe2 by means of low temperature scanning tunneling microscopy/spectroscopy (STM/STS), angle-resolved photoemission spectroscopy (ARPES), and electrical transport measurements. We demonstrate that 3x3 CDW order in NbSe2 remains intact in 2D.

Here, we investigate the CDW in monolayer NbS 2 using scanning tunneling microscopy (STM) and spectroscopy (STS) as well as theoretical ab initio based modeling. Within a clear gap in the STS measured dI/dV spectra, a persistent and position-dependent fine structure is observed. We demonstrate that the measured unconventional gap with its low ...