2022年10月13日 · In monolayer niobium diselenide (NbSe 2), the non-centrosymmetric crystalline structure together with the spin–orbit interaction locks the spin to the out-of-plane direction, resulting in Ising...

2025年1月2日 · Here, we report a gate-controlled superconducting switch in GaSe/NbSe 2 van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe 2 under an electric field, a non-equilibrium state is induced, resulting in significant modulation of …

Download scientific diagram | a) TGA curves of NbSe2 NSs and NbSe2 NSs/G. b) N adsorption and desorption isotherm curve and pore distribution (inset) of NbSe2 NSs/G. c) Raman spectra of...

2015年11月9日 · In this work, we demonstrate very high in-plane upper critical fields induced by spin–momentum locking in superconducting monolayers of group-V TMD niobium diselenide (NbSe 2). This was achieved...

NbSe2材料减薄到单层极限时，可以获得二维Ising超导性，虽然面内上临界场显著提升，但超导转变温度却有所下降，仅有0.9-3.7K，也就是说单层NbSe2 Ising超导性的获得是以牺牲其他重要性质为代价的。

2018年2月9日 · We show that van der Waals tunnel barriers, fabricated by exfoliation and transfer of layered semiconductors, sustain stable currents with strong suppression of sub-gap tunneling. This allows us to...

2020年2月15日 · In this study, we first demonstrate that few-layered graphene (FLG) with low defect density can be prepared from bulk graphite via ball-milling in ethanol. Extending this concept, NbSe 2 is introduced as a new 2D additive in …

2024年10月17日 · In this letter, we adopted an organic cation intercalation technique to modulate the interlayer interaction of NbSe 2 by expanding the interlayer distance, thereby making intercalated NbSe 2 behave similarly to monolayer NbSe 2.

2010年2月1日 · In the present study we have attempted to prepare 2H-NbSe 2, 2H-Ga 0.05 NbSe 2 and 2H-Ga 0.10 NbSe 2 compounds. 2H-NbSe 2 with large RRR value (∼67 for single crystal) shows superconductivity (Ts =7.4 K) below a Charge Density Wave (CDW), which is vanished for lower RRR value (∼13 for pellet), at 35 K similar to reported results [8], [10].

通过在电场下将高能电子注入 NbSe2，诱导非平衡状态，从而显着调节超导特性。 由于铁电 GaŠe 的固有极化，实现了更陡峭的亚阈值斜率和不对称调制，这对器件性能有利。