
mp-525: NbSe3 (monoclinic, P2_1/m, 11)
NbSe3 crystallizes in the monoclinic P2_1/m space group. The structure is two-dimensional and consists of one NbSe3 sheet oriented in the (1, 0, 0) direction. there are three inequivalent Nb5+ sites. In the first Nb5+ site, Nb5+ is bonded in a 8-coordinate geometry to eight Se+1.67- atoms.
Niobium triselenide - Wikipedia
Niobium triselenide is an inorganic compound belonging to the class of transition metal trichalcogenides. It has the formula NbSe 3. It was the first reported example of one-dimensional compound to exhibit the phenomenon of sliding charge density waves. [1] .
Phase transitions in NbSe3 - ScienceDirect
1976年11月1日 · We describe the physical properties of the transition metal trichalcogenide NbSe 3 including electrical resistivity, magnetic susceptibility, and heat capacity. NbSe 3 undergoes phase transitions at 145 and 59 K. The effect of pressure on these transitions is also reported.
Electronic Structure of NbSe3 | SpringerLink
In this article we survey theoretical investigations for the electronic structure of NbSe 3 and its characteristics. During the last decade much interest has been aroused for MX 3 compounds, especially NbSe 3 [1–5] because of the existence of its two CDW phase transitions and accompanied Fröhlich sliding mode [6, 7].
Charge-density waves in NbSe3 at 145K: crystal structures, X-ray …
1978年10月28日 · The crystal structure of NbSe 3 has been refined from single crystal X-ray diffraction data. It has a monoclinic symmetry with lattice parameters: a=10.009 AA, b=3.4805 AA, c=15.629 AA, beta =109.47 AA, space group P2 1 /m and six formulae per unit cell.
Orientation‐Selective Memory Switching in Quasi‐1D NbSe3 …
2024年11月20日 · Benefitting from the highly aligned diffusive channel associated with a quasi-1D van der Waals structure, the memristor patterned along NbSe 3 atomic chains presents robust memory switching behavior with superior stability, particularly the low set/reset voltages (0.4 V/−0.36 V) and extremely small standard deviation (0.041 V/0.051 V), among the...
Magnetic field mediated charge density wave transport in Ni doped NbSe3 …
2024年5月1日 · Here, we report magnetization-induced transport anomalies in magnetic impurity Ni doped NbSe3 nanowires, which is toward suppressing the anomalous features of pristine CDW states and inducing the typical transport characteristics of disordered metallic phase accompanied by new emergent metastable CDW states or a tunneling-like transport behavior.
准一维材料NbSe3的微结构和电荷密度波研究 - 百度学术
低维材料可以表现出三维材料所不具有的很多物理特性,自从上世纪六七十年代以来,低维材料中的新奇物理现象和结构相变一直是凝聚态物理研究的热点之一.NbSe3是一种典型的准一维材料,每个Nb原子与其最近邻的Se原子构成Nb-Se三棱柱结构,每个单胞内含六个三棱柱 ...
Charge density wave transitions in mechanically-exfoliated NbSe3 ...
2021年6月11日 · We studied charge density wave (CDW) transitions in NbSe 3 devices with thicknesses t from 20 to 170 nm, fabricated by the mechanical exfoliation technique. NbSe 3 exhibits two CDW transitions: one is the linear nesting (CDW1) below K and the other is the diagonal nesting (CDW2) below K.
纳米人-Science: 一维NbSe3的极限之旅! - nanoer.net
NbSe3 的电子能带结构高度依赖于其链数和方向。 二维材料区别于其块体的独特性质激发了研究者对低维材料强烈的实验及理论兴趣。 它们通常表现出与块体材料明显不同的电子、光学和结构性质,因而具有深厚的物理基础和广泛的应用前景。