2023年3月30日 · To elucidate the in vivo effects of MSS‐associated NFIX exon 7 mutations, we used CRISPR‐Cas9 to generate mouse models with exon 7 deletions that comprised: a frameshift deletion of two nucleotides (Nfix Del2); in‐frame deletion of 24 nucleotides (Nfix Del24); and deletion of 140 nucleotides (Nfix Del140).

In contrastto the CMV promoter, a hybrid promoter consisting of a minimal CMV promoter and the enhancer II ofhepatitis B virus was active for at least 11 weeks in mouse liver.

Nothobranchius furzeri (NFIN) Mouse: Genome resources. Mouse: Order transgenic mice from Jackson. Seminars and Meetings . Seminars at Stanford. Keystone Symposia. Cold Spring Harbor Laboratory Meetings. Gordon Conferences. FASEB Meetings

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The progress of aging research in vertebrates is hampered by the lifespan of the available model systems (mouse and zebrafish) which is of several years. Only few years ago, researchers from FLI found the Turquois killifish ( Nothobranchius furzeri ) to have an extremely short lifespan.

The National Forensic Interviewing Network, or NFIN, was created to provide training and expertise within the field of child abuse and trauma services.

E T A 0 [L, N] = E T A 0 i × [1. 0 + E T A 0 N 1 N F I N ⋅ l n (1. 0 + N F I N E T A 0 N 2)] (3. 7 6) × [1. 0 + (N F I N − N F I N N O M) ⋅ E T A 0 L T ⋅ L e f f] \begin{aligned} ETA0[L, N] &= ETA0_i \times \Big[ 1.0 + \dfrac{ETA0N1}{NFIN} \cdot ln (1.0 + \dfrac{NFIN}{ETA0N2}) \Big] \qquad (3.76) \\ \\ &\times [1.0 + (NFIN - NFINNOM ...

An illustration of the difference between NF and NFIN. Binning of NFIN parameter: BISM4 supported binning along parameters L and W. FinFETs being geometrically different, BSIM-CMG supports binning along L and NFIN.

2020年2月18日 · This example is following the convention we agreed upon (nfin, nf, m): nfin : Number of fins in an atomic transistor (equivalent to W in bulk technologies) nf : Number of fingers that share diffusion. m : Number of instances of the transistor specified with nfin and nf

摘要: 为研究Bulk FinFET工作时基本结构参数、器件温度和栅极材料对其性能的影响，建立了一个15 nm n型Bulk FinFET器件模型，仿真分析了不同栅长、鳍宽、鳍高、沟道掺杂浓度、器件工作温度、栅极材料对器件性能的影响，发现增长栅长、降低鳍宽和增加鳍高有助于抑制短沟道效应；1×10 17 cm −3 以下的低沟道掺杂浓度对器件特性影响不大，但高掺杂会使器件失效；器件工作温度的升高会导致器件性能的下降；采用高K介质材料作为栅极器件性能优于传统材料SiO 2。