2007年11月1日 · NiPtSi was characterized using SIMS, ellipsometry, voltage contrast (ES25) testing and electrical performance measurements of 65 nm test structures. Results show that when an in situ remote plasma pre-clean is used in addition to a classical HF wet clean to remove native oxide from the Si substrate prior to NiPt deposition and silicidation, Rs ...

2017年11月15日 · Only NiSi seems to keep a part of its properties stable after oxidation, even pure SiO 2 was observed on the surface at wet oxidation according to XPS observation. NiSi also noted the low sheet resistance (≈7.3 Ω/ ) and resistivity (18 …

Energy Dispersion Scanning (EDS) and Grazing Incidence X-Ray Diffraction (GIXRD) were used to confirm the composition and phase of the NiPtSi for each rapid thermal process (RTP) temperature. The Scanning Electron Microscopy was also used to evaluate the surface and difference for each temperature.

2011年2月1日 · X-ray photoelectron spectroscopy (XPS) has been used to characterize the reactivities of clean, stoichiometric NiSi and Ni(Pt)Si films on n-doped Si(100) substrates in O 2, and in O+O 2 environments.

2008年9月15日 · X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni (Pt)Si surface under two distinct conditions: exposure to a...

2007年11月1日 · X-ray photoelectron spectroscopy (XPS) has been used to characterize the reactivities of clean, stoichiometric NiSi and Ni(Pt)Si films on n-doped Si(100)...

To contain leakage with aggressive shallow junctions (Fig 5), a silicide process improvement is demonstrated in this study using millisecond laser anneal for NiPtSi formation. For further device scaling (Fig. 2 & 3), aggressive Source and Drain implantation and junction anneal techniques are needed [4]. However, short channel control through.

HF wet clean, argon sputter etch and remote plasma pre-clean were used as silicide pre-cleans prior to NiPt sputter deposition and subsequent silicidation on blanket and patterned Si wafers. NiPtSi was characterized using SIMS, ellipsometry, voltage contrast (ES25) testing and electrical performance measurements of 65 nm test structures.

The anomalous Ni diffusion during the NiPtSi formation is considered to be suppressed because MW system heats Si substrates selectively. As a result, low-resistive and homogeneous NiPtSi can be formed, and the increase of the junction leakage current due to the abnormal NiPt-silicide growth is successfully suppressed in USJ.

2007年11月1日 · X-ray photoelectron spectroscopy (XPS) has been used to characterize the oxidation of a clean Ni(Pt)Si surface under two distinct conditions: exposure to a mixed flux of atomic and molecular oxygen (O + O 2; P O + O 2 = 5 × 10 −6 Torr) and pure molecular oxygen (O 2; P O 2 = 10 −5 Torr) at ambient temperatures. Formation of the clean ...