It is found that improved post-resistance of eFuse is attributed to the low temperature growth of Ni 3 Si 2 induced by HTS test at 250°C, which is microscopically proven by both ex-situ and in-situ TEM. In fact, Ni agglomeration, in which Ni resides around void formed in the fuse link, plays an important role of this crystallization.

Abstract: An advanced CMOS technology process reliability qualification especially for the NiSi poly gated electrical fuse (eFuse) consists of electrical characterization, physical analyses and reliability evaluations. In this paper, insights are given on microstructural behaviors of the programmed NiSi poly gated eFuse induced by the high ...

NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions.

2010年1月1日 · It is found that improved post-resistance of eFuse is attributed to the low temperature growth of Ni3Si2 induced by HTS test at 250°C, which is microscopically proven by both ex-situ and in-situ...

NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical … Expand

The document discusses the characterization of NiSi electrically programmable fuses (eFUSE) fabricated using 65nm logic CMOS technology, focusing on the optimization of fuse programming through the analysis of electrical and physical responses.

Fig. 1. Schematic of eFuse strucure and prog - "Phase transformation of programmed NiSi electrical fuse: Diffusion, agglomeration and thermal stability"

2007年8月27日 · The programming characteristics and reliability of NiSi polysilicon fuse fabricated using 65-nm logic complimentary metal-oxide-semiconductor technology were studied. Under optimal programming conditions, high postprogram resistance can be achieved. These well-programmed fuses showed good data retention under unbiased temperature stress test.

2011年7月1日 · An advanced CMOS technology process reliability qualification especially for the NiSi poly gated electrical fuse (eFuse) consists of electrical characterization, physical analyses and...

2006年12月5日 · We propose a novel electrical fuse (e-fuse) program procedure using shallow trench isolation (STI) edge trapping mechanism of PMOSFET by applying AC pulses. We obtained flash characteristics...