
Vortex‐Oriented Ferroelectric Domains in SnTe/PbTe Monolayer …
2021年7月3日 · Here, we report the molecular beam epitaxial (MBE) growth and scanning tunneling microscopy (STM) characterization of the LHS between two distinct group-IV monochalcogenide MLs—an in-plane polarized ferroelectric SnTe ML and a …
Experimental verification of band convergence in Sr and Na codoped PbTe
2023年9月14日 · Scanning tunneling microscopy (STM) and transport measurements have been performed to investigate the electronic structure and its temperature dependence in heavily Sr and Na codoped PbTe, which is recognized as one …
Charge and phonon transport in PbTe-based thermoelectric …
2018年11月1日 · In p-type PbTe, the strategies of band convergence, band alignment and density of state (DOS) distortion are more effective to achieve high electrical transport properties. By contrast,...
Studies of layers with varying PbTe layer thicknesses give a critical layer thickness hc for the onset of misfit dislocation formation of only 0.8 ML, and STM images of very early relaxation stages show that misfit dislocation half loops are injected laterally from monolayer step edges on the surface (Fig. 1(b)). With increasing PbTe layer ...
Discovery of robust in-plane ferroelectricity in atomic-thick SnTe
2016年7月15日 · Here, we report the discovery of the stable in-plane spontaneous polarization in atomic-thick tin telluride (SnTe), down to a 1–unit cell (UC) limit. The ferroelectric transition temperature Tc of 1-UC SnTe film is greatly enhanced from the bulk value of 98 kelvin and reaches as high as 270 kelvin.
Emergence of distinct electronic states in epitaxially-fused PbSe ...
2022年11月10日 · Colloidal PbSe quantum dots (QDs) that self-assemble into epitaxially-fused superlattices (epi-SLs) are predicted to exhibit such collective phenomena. Here, we show the emergence of distinct local...
MBE growth of stanene on PbTe(111). a) Schematic of the sample...
In 2018, a two-step MBE growth recipe has been developed to prepare single-layer stanene on PbTe(111) by Zang et al. [16]. In the experiment, Sn atoms were first deposited on PbTe(111) with the...
我院在二维半导体薄膜带隙的原子级精确调控方面取得进展
2023年7月11日 · 该文的研究者通过分子束外延(MBE)技术在石墨化的碳化硅衬底上制备了PbTe薄膜,并利用扫描隧道显微镜(STM)技术对其带隙展开了系统的研究。 首先,研究者利用STM表征PbTe的形貌(图1 (a, b)),确定不同PbTe薄膜的原子层厚,发现PbTe在石墨化的碳化硅衬底上一开始以双原子层(EAL)形式出现,从第9个原子层开始出现奇数层(OAL),而PbTe带隙随着厚度降低存在增大的趋势,并且在相邻的奇偶层中带隙的大小存在振荡(图1 (c))。 …
(a) Crystal structure of SnTe and PbTe. (b) RHEED ... - ResearchGate
Optically pumped vertical external cavity surface emitting lasers (VECSELS) emitting in the mid-infrared range are demonstrated with an active structure based on PbTe quantum dots (QDs) embedded...
Nano-scale dislocation patterning in PbTe on PbSe (1 0 0) …
2002年3月1日 · In the present work, we have studied misfit dislocation patterning in the 5.2% lattice-mismatched PbTe on PbSe (1 0 0) heteroepitaxial system using UHV scanning tunneling microscopy (STM). From our experimental observations it is demonstrated that, in this case, highly regular arrays of misfit dislocation can be produced.