行.实验中采用Centrotherm 直接式高频PECVD来制备SiON 薄膜. 薄膜生长过程中,气体反应物的种类及流量大小、腔内压力、沉积温度以及射频功率都会影响薄膜性质,因此我们首先系统地研究了不同工艺参数对沉积的SiON薄膜厚度及折射率的影响, 薄膜厚度和折射率通过椭 ...

PECVD – showerhead bright spots It is quite common to see PECVD showerhead holes becoming enlarged. This is caused during high-power processing (on an 80 Plus this is typically during plasma cleaning). Any holes which have slightly sharper edges will form an intense discharge over the hole (due to the high fields generated by the sharper edges).

2021年5月15日 · In this paper, the analysis of silicon oxynitride (SiON) films, deposited utilizing the plasma enhanced chemical vapor deposition (PECVD) process, for optical waveguides on silicon wafers is presented. The impact of N2O flow rate on …

Hydrogenated silicon oxynitride (SiOxNy:H abbreviated SiON afterwards) can be deposited at low temperature with Plasma Enhanced Chemical Vapour Deposition (PECVD). It exhibits low absorbance and adjustable refractive index between 1.45 and 1.9 [1] by changing the ratio of precursor gas flow during deposition.

2008年8月30日 · Hydrogenated silicon oxynitride (SiO x N y:H abbreviated SiON afterwards) can be deposited at low temperature with Plasma Enhanced Chemical Vapour Deposition (PECVD). It exhibits low absorbance and adjustable refractive index between 1.45 and 1.9 [1] by changing the ratio of precursor gas flow during deposition.

1999年4月1日 · Silicon Oxynitride (SiON) layers are grown from SiH4/N2, NH3 and N2O by Plasma Enhanced Chemical Vapor Deposition (PECVD). The process is optimized with respect to deposition of layers with...

The SiN were deposited by a plasma-enhanced chemical vapor deposition (PECVD) system. Great differences in the gate leakage current, breakdown voltage, interface traps, and current collapse were observed. The SiON MIS-HEMT exhibited the highest breakdown voltage and I …

摘要 研究了等离子增强化学气相淀积（PECVD）氢氧化硅（SiON）薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路（VLSI）光互连中的潜在应用。 The technology control, structure and properties of PECVD SiON films and thepotential applications of thih film waveguides in optical interconnections for VLSI arediscussed in this peper.

In this study, we have developed a high-performance H:SiON single layer TFE deposited by the PECVD method. To control the characteristics of the SiON thin lms, such as the lm density

2005年3月22日 · SiO 2 and SiON films were deposited by radiofrequency plasma-enhanced chemical vapor deposition (rf PECVD) technique using SiH 4 and N 2 O as precursor gases. The refractive index (n) decreases to 1.4480 with the increase of the rf bias power from 0 to 75 W and again increases to 1.4486 at the rf bias power of 100 W.