
PECVD | ASM
PECVD, or Plasma-Enhanced Chemical Vapor Deposition, is a specialized technology that utilize s plasma to enable deposition at lower temperatures — perfect for certain applications. In PECVD, one or more gaseous reactants are used to form a solid insulating or conducting layer on the surface of a wafer.
Plasma Enhanced Chemical Vapor Deposition (PECVD) | Corial
Featuring films with tight control of mechanical properties (stress), with the use of a single RF power source, CORIAL’s PECVD tools are easy to use and offer high process reliability. Our proprietary reactor design is key to ensuring minimum impurity levels in deposited films.
Plasma Enhanced CVD System | CVD Equipment Corporation
2015年8月7日 · The system is designed for PECVD processes for thin film deposition as well as growth of Carbon Nanofibers (CNFs) and Carbon Nanotubes (CNTs). Using low temperature plasma enhanced technology, reduced pressure, heat, and process gas delivery to the process chamber, the PECVD200™ offers excellent material property control, conformity, and step ...
Plasma Enhanced CVD - ACM Research, Inc.
ACM Research's Plasma Enhanced chemical vapor deposition (PECVD) process tools are designed to meet your thick- and thin-film deposition needs.
PECVD Systems—Ultra Pmax™ - ACM Research, Inc.
Our Ultra Pmax™ PECVD tool is equipped with a proprietary designed chamber, gas distribution unit, and chuck to deliver better film uniformity, reduced film stress, and improved particle performance.
P5000 PECVD - LNF Wiki
6 天之前 · The Applied Materials P5000 PECVD system is a multi-chamber Plasma Enhanced Chemical Vapor Deposition (PECVD) tool with standard operating temperatures of 200-400C. Chamber A (not available) is configured for highly conformal TEOS (SiO 2) film deposition, but is not available for processing at this time due to lack of a chemical delivery cabinet.
Pecvd 工艺类型、设备结构及其工艺原理 - Kintek Solution
PECVD(等离子体增强化学气相沉积)装置中的气体和流量控制系统是确保向工艺室精确输送反应气体的关键部件。 主要气源通常由气瓶提供,气瓶安装在专门的气柜中。
Corial D250L PECVD system - Plasma-Therm
The Corial D250L PECVD system achieves rapid and uniform deposition for a wide range of materials including SiO2, Si3N4, SiOCH, SiOF, SiC and aSi-H films, on wafers up to 200 mm diameter.
Lpcvd、Pecvd 和 Icpcvd 工艺的比较与应用分析 - Kintek Solution
PECVD(等离子体增强化学气相沉积)利用低温等离子体促进气相反应,从而在较低温度下在基底表面沉积薄膜。 该工艺包括在低气压下在工艺室内产生辉光放电,通常是在放置样品的阴极处。
十分钟读懂PECVD - 知乎
PECVD技术是在低气压下,利用低温等离子体在工艺腔体的阴极上(即样品放置的托盘)产生辉光放电,利用辉光放电(或另加发热体)使样品升温到预定的温度,然后通入适量的工艺气体,这些气体经一系列化学反应和等离子体反应,最终在样品表面形成固态薄膜。