2015年7月2日 · The X-ray Interference Lithography (XIL) beamline provides spatially coherent beam in the Extreme Ultraviolet (EUV) energy range. The light from the undulator source is filtered by a pinhole spatial filter to deliver spatially coherent illumination in the custom designed exposure chamber.

With a world record in resolution for photolithography down to 6 nm half pitch, the XIL-II beamline at is the world-leading tool and is used extensively used for both academic and industrial research as well as for commercial applications.

2024年9月18日 · 瑞士Paul Scherrer研究所(PSI)的研究人员开发了一种新的EUV-IL装置，该装置采用基于反射镜的技术，突破了传统基于光栅方法固有的衍射效率对衍射极限的限制，显著提高了光刻的分辨率，可用于制造更密集的电路模式，有望进一步推进计算机芯片的小型化。

Yasin Ekinci, PSI Page: 2 EUV interference lithography Basics of EUV-IL XIL-II: EUV-IL @ PSI Versatile and high-resolution patterning with EUV-IL

Optimized for 92 eV (13.5 nm) ...

Summary: We report the progress of EUV resists towards next generation high-NA EUVL evaluated with 2-beam EUV interference lithography (EUV-IL) at PSI. We have shown six best performance EUV resists out of hundred and fifty types.

Rinse material shown to improve BE and LWR of CARs. Both UL1R2 and reference are well resolved down to 12 nm HP with some pattern collapse and pinching with Std. and new rinse. UL1R2 also has high EL down to 13 nm HP ~ 10% and lower LWR (~ 4.4 nm) but BE is relatively high ~ 52 mJ/cm2 when Std. rinse is used.

A research group led by Dimitrios Kazazis and Yasin Ekinci at the Laboratory for X-ray Nanoscience and Technologies at the Paul Scherrer Institute PSI, in collaboration with researchers from University College London (UCL) in the UK, has now succeeded in making important progress towards further miniaturisation in the IT industry.

2023年4月19日 · We achieve silicon dioxide/silicon gratings with 75-nanometer half-pitch and 31-nanometer height, demonstrating the efficacy of the method and the feasibility of patterning with EUV lithography without the use of a photoresist.

2018年5月2日 · Based on the coherent radiation from an undulator source, extreme UV interference lithography (EUV-IL) technology is considered as the leading candidate for future nodes of high-volume semiconductor manufacturing.