1999年12月15日 · The piezoelectric constant e 31 measurement procedure is presented for sputtered lead zirconate titanate (PZT) thin films deposited on silicon substrates. With a simple …

1999年10月12日 · The effective piezoelectric transverse coefficient e 31,f was measured on various lead zirconate–titanate (PZT) and aluminum nitride thin films. The measurement set …

PZT的性能优势在于其压电系数高，e31达到-15 C/m2，d33可以达到300 pC/N，d31可以达到200 pC/N以上。 除此之外，PZT还是一种铁电材料，具有铁电性。 铁电材料稍微复杂一些，铁电 …

2000年1月1日 · The piezoelectric constant e₃₁ measurement procedure is presented for sputtered lead zirconate titanate (PZT) thin films deposited on silicon substrates.

Work by Dubois suggests that for a given film microstructure and poling state, the magnitude of the e 31 , f coefficient increases with applied static tensile strains, and decreases for applied...

2015年9月2日 · In this study, we evaluated the e31,f of PZT thin films from both the direct and converse piezoelectric effects for the same unimorph cantilever specimen, and compared their …

2001年5月21日 · Classical plate theory and elastic analysis are used to calculate the stresses in doped lead zirconate titanate (PZT) film for different radii of supporting rings, enabling both …

For optimal MEMS development it is essential to fundamentally characterise the electromechanical properties of piezoelectric thin films, such as lead zirconate titanate (PZT). …

2008年3月24日 · The purpose of this paper is to develop a direct method to measure e 31 of PZT thin films regardless of the boundary conditions of the specimens. The experimental setup …

2005年5月1日 · It was demonstrated that c-axis PZT films can achieve e31,f exceeding −12 C/m2 for many tetragonal compositions. The energy harvesting figure of merit, e31,f2/εr, for c-axis …